naa a22 4500 510800440 CHVBK 20180411083353.0 cr unu---uuuuu 180411e20130101xx s 000 0 eng 10.1007/s11664-012-2309-x doi (NATIONALLICENCE)springer-10.1007/s11664-012-2309-x Linear Optical Response of Silicon Nanotubes Under Axial Magnetic Field [Elektronische Daten] [Raad Chegel, Somayeh Behzad] We investigated the optical properties of silicon nanotubes (SiNTs) in the low energy region, E<0.5eV, and middle energy region, 1.8eV<E<2eV. The dependence of optical matrix elements and linear susceptibility on radius and magnetic field, in terms of one-dimensional (1-d) wavevector and subband index, is calculated using the tight-binding approximation. It is found that, on increasing the nanotube diameter, the low-energy peaks show red-shift and their intensities are decreased. Also, we found that in the middle energy region all tubes have two distinct peaks, where the energy position of the second peak is approximately constant and independent of the nanotube diameter. Comparing the band structure of these tubes in different magnetic fields, several differences are clearly seen, such as splitting of degenerate bands, creation of additional band-edge states, and bandgap modification. It is found that applying the magnetic field leads to a phase transition in zigzag silicon hexagonal nanotubes (Si h-NTs), unlike in zigzag silicon gear-like nanotubes (Si g-NTs), which remain semiconducting in any magnetic field. We found that the axial magnetic field has two effects on the linear susceptibility spectrum, namely broadening and splitting. The axial magnetic field leads to the creation of a peak with energy less than 0.2eV in metallic Si h-NTs, whereas in the absence of a magnetic field such a transition is not allowed. TMS, 2012 Nanostructures nationallicence semiconductors nationallicence electrooptical properties nationallicence magnetic field nationallicence Chegel Raad Physics Department, Faculty of Science, Malayer University, Malayer, Iran aut Behzad Somayeh Department of Nano Science, Kermanshah University of Technology, Kermanshah, Iran aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/1(2013-01-01), 58-70 0361-5235 42:1<58 2013 42 11664 https://doi.org/10.1007/s11664-012-2309-x text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-012-2309-x text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Chegel Raad Physics Department, Faculty of Science, Malayer University, Malayer, Iran aut NATIONALLICENCE 700 1- Behzad Somayeh Department of Nano Science, Kermanshah University of Technology, Kermanshah, Iran aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/1(2013-01-01), 58-70 0361-5235 42:1<58 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer