naa a22 4500 510800467 CHVBK 20180411083353.0 cr unu---uuuuu 180411e20130101xx s 000 0 eng 10.1007/s11664-012-2268-2 doi (NATIONALLICENCE)springer-10.1007/s11664-012-2268-2 The Influence of Interface States at the Schottky Junction on the Large Signal Behavior of Copper-Gate GaN HEMTs [Elektronische Daten] [Michele Esposto, Valerio Lecce, Matteo Bonaiuti, Alessandro Chini] The large signal characteristics of Cu-gate and Ni/Au-gate AlGaN/GaN high-electron-mobility transistors (HEMTs) were compared. The tested devices were fabricated on two different parts of the same wafer following the same fabrication steps, the only difference being in the Schottky contact material. Comparison of the direct-current (DC) and radio frequency (RF) characteristics points out a critical drain current collapse in the Cu-gate devices, with detrimental effects on the RF performance, whereas the Ni/Au-gate HEMTs performed properly during DC, pulsed, and RF measurements. Investigations on the drain current transients and on the I D-V GS characteristics, obtained by pulsed signals, suggest the presence of an acceptor trap density in the AlGaN barrier, beneath the Cu Schottky gate contact, responsible for the poorer performance of the Cu-gate device; an activation energy of 430meV was extracted. This defectivity seemed to be due to a copper diffusion event, activated by thermal stress induced in the sample during the plasma-enhanced chemical vapor deposition (PECVD) of SiN. Numerical simulations carried out on the tested structure qualitatively support the presence of a trap density explaining the nature of the observed drain current transients. TMS, 2012 AlGaN/GaN high-electron-mobility transistors (HEMTs) nationallicence copper diffusion nationallicence copper gate nationallicence drain current collapse nationallicence interface trap nationallicence Schottky contact nationallicence Esposto Michele Information Engineering Department, University of Modena and Reggio Emilia, Strada Vignolese 905, I-41125, Modena, Italy aut Lecce Valerio Information Engineering Department, University of Modena and Reggio Emilia, Strada Vignolese 905, I-41125, Modena, Italy aut Bonaiuti Matteo Information Engineering Department, University of Modena and Reggio Emilia, Strada Vignolese 905, I-41125, Modena, Italy aut Chini Alessandro Information Engineering Department, University of Modena and Reggio Emilia, Strada Vignolese 905, I-41125, Modena, Italy aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/1(2013-01-01), 15-20 0361-5235 42:1<15 2013 42 11664 https://doi.org/10.1007/s11664-012-2268-2 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-012-2268-2 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Esposto Michele Information Engineering Department, University of Modena and Reggio Emilia, Strada Vignolese 905, I-41125, Modena, Italy aut NATIONALLICENCE 700 1- Lecce Valerio Information Engineering Department, University of Modena and Reggio Emilia, Strada Vignolese 905, I-41125, Modena, Italy aut NATIONALLICENCE 700 1- Bonaiuti Matteo Information Engineering Department, University of Modena and Reggio Emilia, Strada Vignolese 905, I-41125, Modena, Italy aut NATIONALLICENCE 700 1- Chini Alessandro Information Engineering Department, University of Modena and Reggio Emilia, Strada Vignolese 905, I-41125, Modena, Italy aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/1(2013-01-01), 15-20 0361-5235 42:1<15 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer