naa a22 4500 510800491 CHVBK 20180411083353.0 cr unu---uuuuu 180411e20130101xx s 000 0 eng 10.1007/s11664-012-2311-3 doi (NATIONALLICENCE)springer-10.1007/s11664-012-2311-3 Properties of the Mo Back Contact for the Formationof a Thin-Film Photovoltaic Absorber [Elektronische Daten] [S.S. Wang, C.Y. Hsu, F.J. Shiou, P.C. Huang, D.C. Wen] A Taguchi experimental design was used to find which deposition parameter has the most dominant effect on the electrical resistivity of molybdenum (Mo) films. Based on the most important parameter, the Mo films were further characterized by structural, electrical, and adhesive methods. Then, a copper indium gallium selenide (CIGS) thin film was fabricated by a two-stage process on the obtained Mo layer. The results show that working pressure had a dominant effect on electrical resistivity. The Mo films deposited at 1mTorr and 2mTorr exhibited compressive strain and dense polycrystalline microstructure, whereas those deposited at 3mTorr and 4mTorr exhibited tensile strain and an elongated grain with open boundaries. A Mo film with open porous structure, tensile strain, and lower resistivity was suitable for the formation of CIGS films. After selenization at 560°C, a single-phase chalcopyrite CIGS film with a layer of MoSe2 at the Mo/CIGS interface was obtained. TMS, 2012 Mo nationallicence CIGS nationallicence selenization nationallicence electrical resistivity nationallicence magnetron sputtering nationallicence Wang S.S. Department of Mechanical Engineering, National Taiwan University of Science and Technology, Taipei, Taiwan, ROC aut Hsu C.Y. Department of Mechanical Engineering, Lunghwa University of Science and Technology, Guishan, Taiwan, ROC aut Shiou F.J. Department of Mechanical Engineering, National Taiwan University of Science and Technology, Taipei, Taiwan, ROC aut Huang P.C. Department of Mechanical Engineering, Lunghwa University of Science and Technology, Guishan, Taiwan, ROC aut Wen D.C. Department of Mechanical Engineering, China University of Science and Technology, Taipei, Taiwan, ROC aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/1(2013-01-01), 71-77 0361-5235 42:1<71 2013 42 11664 https://doi.org/10.1007/s11664-012-2311-3 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-012-2311-3 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Wang S.S. Department of Mechanical Engineering, National Taiwan University of Science and Technology, Taipei, Taiwan, ROC aut NATIONALLICENCE 700 1- Hsu C.Y. Department of Mechanical Engineering, Lunghwa University of Science and Technology, Guishan, Taiwan, ROC aut NATIONALLICENCE 700 1- Shiou F.J. Department of Mechanical Engineering, National Taiwan University of Science and Technology, Taipei, Taiwan, ROC aut NATIONALLICENCE 700 1- Huang P.C. Department of Mechanical Engineering, Lunghwa University of Science and Technology, Guishan, Taiwan, ROC aut NATIONALLICENCE 700 1- Wen D.C. Department of Mechanical Engineering, China University of Science and Technology, Taipei, Taiwan, ROC aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/1(2013-01-01), 71-77 0361-5235 42:1<71 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer