naa a22 4500 510800505 CHVBK 20180411083353.0 cr unu---uuuuu 180411e20130101xx s 000 0 eng 10.1007/s11664-012-2259-3 doi (NATIONALLICENCE)springer-10.1007/s11664-012-2259-3 Fast Preparation and Low-Temperature Thermoelectric Properties of CoSb3 [Elektronische Daten] [Taichao Su, Chunyuan He, Hongtao Li, Xin Guo, Shangsheng Li, Hongan Ma, Xiaopeng Jia] Polycrystalline p-type CoSb3 was synthesized by the high-pressure method. The microstructure and temperature-dependent thermoelectric properties of CoSb3 were investigated. X-ray diffraction and scanning electron microscopy showed that single-phase CoSb3 with fine grain size could be quickly synthesized under high pressure. The carrier concentrations of CoSb3 could be tuned by more than a factor of 10 by changing the pressure during synthesis. With the increase of the synthetic pressure, the Seebeck coefficient and resistivity of CoSb3 increase while the thermal conductivity decreases. TMS, 2012 High pressure nationallicence transport properties nationallicence CoSb3 nationallicence Su Taichao Institute of Materials Science and Engineering, Henan Polytechnic University, 454000, Jiaozuo, China aut He Chunyuan Institute of Materials Science and Engineering, Henan Polytechnic University, 454000, Jiaozuo, China aut Li Hongtao Shanghai Entry-Exit Inspection & Quarantine Bureau, 200135, Shanghai, China aut Guo Xin National Lab of Superhard Materials, Jinlin University, 130012, Changchun, China aut Li Shangsheng Institute of Materials Science and Engineering, Henan Polytechnic University, 454000, Jiaozuo, China aut Ma Hongan National Lab of Superhard Materials, Jinlin University, 130012, Changchun, China aut Jia Xiaopeng Institute of Materials Science and Engineering, Henan Polytechnic University, 454000, Jiaozuo, China aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/1(2013-01-01), 109-113 0361-5235 42:1<109 2013 42 11664 https://doi.org/10.1007/s11664-012-2259-3 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-012-2259-3 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Su Taichao Institute of Materials Science and Engineering, Henan Polytechnic University, 454000, Jiaozuo, China aut NATIONALLICENCE 700 1- He Chunyuan Institute of Materials Science and Engineering, Henan Polytechnic University, 454000, Jiaozuo, China aut NATIONALLICENCE 700 1- Li Hongtao Shanghai Entry-Exit Inspection & Quarantine Bureau, 200135, Shanghai, China aut NATIONALLICENCE 700 1- Guo Xin National Lab of Superhard Materials, Jinlin University, 130012, Changchun, China aut NATIONALLICENCE 700 1- Li Shangsheng Institute of Materials Science and Engineering, Henan Polytechnic University, 454000, Jiaozuo, China aut NATIONALLICENCE 700 1- Ma Hongan National Lab of Superhard Materials, Jinlin University, 130012, Changchun, China aut NATIONALLICENCE 700 1- Jia Xiaopeng Institute of Materials Science and Engineering, Henan Polytechnic University, 454000, Jiaozuo, China aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/1(2013-01-01), 109-113 0361-5235 42:1<109 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer