naa a22 4500 510800521 CHVBK 20180411083353.0 cr unu---uuuuu 180411e20130101xx s 000 0 eng 10.1007/s11664-012-2270-8 doi (NATIONALLICENCE)springer-10.1007/s11664-012-2270-8 Realization of the Switching Mechanism in Resistance Random Access Memory™ Devices: Structural and Electronic Properties Affecting Electron Conductivity in a Hafnium Oxide-Electrode System Through First-Principles Calculations [Elektronische Daten] [Susan Aspera, Hideaki Kasai, Hirofumi Kishi, Nobuyoshi Awaya, Shigeo Ohnishi, Yukio Tamai] The resistance random access memory (RRAM™) device, with its electrically induced nanoscale resistive switching capacity, has attracted considerable attention as a future nonvolatile memory device. Here, we propose a mechanism of switching based on an oxygen vacancy migration-driven change in the electronic properties of the transition-metal oxide film stimulated by set pulse voltages. We used density functional theory-based calculations to account for the effect of oxygen vacancies and their migration on the electronic properties of HfO2 and Ta/HfO2 systems, thereby providing a complete explanation of the RRAM™ switching mechanism. Furthermore, computational results on the activation energy barrier for oxygen vacancy migration were found to be consistent with the set and reset pulse voltage obtained from experiments. Understanding this mechanism will be beneficial to effectively realizing the materials design in these devices. TMS, 2012 Resistance random access memory (RRAM™) nationallicence DFT nationallicence HfO2 nationallicence switching mechanism nationallicence electronic properties nationallicence oxygen vacancy nationallicence Aspera Susan Department of Applied Physics, Osaka University, 565-0871, Suita, Osaka, Japan aut Kasai Hideaki Department of Applied Physics, Osaka University, 565-0871, Suita, Osaka, Japan aut Kishi Hirofumi Department of Applied Physics, Osaka University, 565-0871, Suita, Osaka, Japan aut Awaya Nobuyoshi Corporate Research and Development Group, Sharp Corporation, 1 Asahi, Daimon-cho, 721-8522, Fukuyama, Japan aut Ohnishi Shigeo Corporate Research and Development Group, Sharp Corporation, 1 Asahi, Daimon-cho, 721-8522, Fukuyama, Japan aut Tamai Yukio Corporate Research and Development Group, Sharp Corporation, 1 Asahi, Daimon-cho, 721-8522, Fukuyama, Japan aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/1(2013-01-01), 143-150 0361-5235 42:1<143 2013 42 11664 https://doi.org/10.1007/s11664-012-2270-8 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-012-2270-8 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Aspera Susan Department of Applied Physics, Osaka University, 565-0871, Suita, Osaka, Japan aut NATIONALLICENCE 700 1- Kasai Hideaki Department of Applied Physics, Osaka University, 565-0871, Suita, Osaka, Japan aut NATIONALLICENCE 700 1- Kishi Hirofumi Department of Applied Physics, Osaka University, 565-0871, Suita, Osaka, Japan aut NATIONALLICENCE 700 1- Awaya Nobuyoshi Corporate Research and Development Group, Sharp Corporation, 1 Asahi, Daimon-cho, 721-8522, Fukuyama, Japan aut NATIONALLICENCE 700 1- Ohnishi Shigeo Corporate Research and Development Group, Sharp Corporation, 1 Asahi, Daimon-cho, 721-8522, Fukuyama, Japan aut NATIONALLICENCE 700 1- Tamai Yukio Corporate Research and Development Group, Sharp Corporation, 1 Asahi, Daimon-cho, 721-8522, Fukuyama, Japan aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/1(2013-01-01), 143-150 0361-5235 42:1<143 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer