naa a22 4500 510800548 CHVBK 20180411083353.0 cr unu---uuuuu 180411e20130101xx s 000 0 eng 10.1007/s11664-012-2262-8 doi (NATIONALLICENCE)springer-10.1007/s11664-012-2262-8 Evolution of the Structural and Electrical Properties of GeTe Under Different Annealing Conditions [Elektronische Daten] [Ki-Hong Kim, Yong-Koo Kyoung, Jun-Ho Lee, Yong-Nam Ham, Sang-Jun Choi] GeTe films were found to exhibit chemical, structural, and electrical changes depending on the crystal structure and annealing atmosphere. Amorphous GeTe was converted to cubic crystalline GeTe after annealing treatment at 400°C. Subsequent annealing in air induced phase transitions in the cubic GeTe, resulting in the formation of Ge oxide as the major phase and metallic Te as the minor phase. However, GeTe films deposited at 200°C maintained the rhombohedral structure regardless of the annealing time or atmosphere. TMS, 2012 GeTe nationallicence phase change nationallicence oxygen nationallicence x-ray diffraction nationallicence annealing nationallicence Kim Ki-Hong AS Group, CAS Center, Corporate Technology Operations SAIT, Samsung Electronics Co. Ltd., 446-712, Yongin, Republic of Korea aut Kyoung Yong-Koo AS Group, CAS Center, Corporate Technology Operations SAIT, Samsung Electronics Co. Ltd., 446-712, Yongin, Republic of Korea aut Lee Jun-Ho AS Group, CAS Center, Corporate Technology Operations SAIT, Samsung Electronics Co. Ltd., 446-712, Yongin, Republic of Korea aut Ham Yong-Nam AS Group, CAS Center, Corporate Technology Operations SAIT, Samsung Electronics Co. Ltd., 446-712, Yongin, Republic of Korea aut Choi Sang-Jun Device Architecture Lab, Semiconductor R&D Center, Samsung Electronics Co. Ltd., 446-712, Yongin, Republic of Korea aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/1(2013-01-01), 78-82 0361-5235 42:1<78 2013 42 11664 https://doi.org/10.1007/s11664-012-2262-8 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-012-2262-8 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Kim Ki-Hong AS Group, CAS Center, Corporate Technology Operations SAIT, Samsung Electronics Co. Ltd., 446-712, Yongin, Republic of Korea aut NATIONALLICENCE 700 1- Kyoung Yong-Koo AS Group, CAS Center, Corporate Technology Operations SAIT, Samsung Electronics Co. Ltd., 446-712, Yongin, Republic of Korea aut NATIONALLICENCE 700 1- Lee Jun-Ho AS Group, CAS Center, Corporate Technology Operations SAIT, Samsung Electronics Co. Ltd., 446-712, Yongin, Republic of Korea aut NATIONALLICENCE 700 1- Ham Yong-Nam AS Group, CAS Center, Corporate Technology Operations SAIT, Samsung Electronics Co. Ltd., 446-712, Yongin, Republic of Korea aut NATIONALLICENCE 700 1- Choi Sang-Jun Device Architecture Lab, Semiconductor R&D Center, Samsung Electronics Co. Ltd., 446-712, Yongin, Republic of Korea aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/1(2013-01-01), 78-82 0361-5235 42:1<78 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer