naa a22 4500 510800556 CHVBK 20180411083353.0 cr unu---uuuuu 180411e20130101xx s 000 0 eng 10.1007/s11664-012-2264-6 doi (NATIONALLICENCE)springer-10.1007/s11664-012-2264-6 Structure and Photoluminescent Properties of B3+-Doped (Y0.9Dy0.1)InGe2O7 Phosphor [Elektronische Daten] [Lay-Gaik Teoh, Yeou-Yih Tsai, Mu-Tsun Tsai, Yin-Lai Chai, Yee-Shin Chang] A color-tunable, near-white-light-emitting, B3+-doped (Y0.9Dy0.1)InGe2O7 phosphor was synthesized using a solid-state reaction, and its structure and luminescent properties were determined. X-ray powder diffraction patterns showed that all of the diffraction peaks can be attributed to the monoclinic YInGe2O7 crystal structure for B3+ ion concentration up to 5mol.%, and that the optimal concentration for B3+ doping is 3mol.%. In the photoluminescent studies, increasing the B3+ ion concentration caused the intensities of both the excitation and emission peaks to increase and then decrease. In addition, the color tone changes gradually, from the near-white-light region, through greenish, and finally to yellowish. This change is caused by a decrease in the symmetry of the local structure around the Dy3+ ion when the B3+ ion in the host reaches the optimum concentration for the H3BO3 flux of 3mol.%. When the B3+ content is increased further, the distinct difference in ionic radius between the lattice atoms and the substituent atoms causes the lattice to become distorted and the crystallinity of the (Y0.9Dy0.1)InGe2O7 phosphor to decrease. TMS, 2012 Yttrium indium germanate nationallicence phosphor nationallicence dysprosium nationallicence optical properties nationallicence H3BO3 flux nationallicence Teoh Lay-Gaik Department of Mechanical Engineering, National Pingtung University of Science and Technology, 912, Neipu, Pingtung, Taiwan aut Tsai Yeou-Yih Department of Electronic Engineering, Kao Yuan University, 821, Lujhu, Kaohsiung, Taiwan aut Tsai Mu-Tsun Department of Materials Science and Engineering, National Formosa University, 632, Huwei, Yunlin, Taiwan aut Chai Yin-Lai Department of Jewelry Technology, Dahan Institute of Technology, 971, Hualien, Taiwan aut Chang Yee-Shin Department of Electronic Engineering, National Formosa University, 632, Huwei, Yunlin, Taiwan aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/1(2013-01-01), 156-161 0361-5235 42:1<156 2013 42 11664 https://doi.org/10.1007/s11664-012-2264-6 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-012-2264-6 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Teoh Lay-Gaik Department of Mechanical Engineering, National Pingtung University of Science and Technology, 912, Neipu, Pingtung, Taiwan aut NATIONALLICENCE 700 1- Tsai Yeou-Yih Department of Electronic Engineering, Kao Yuan University, 821, Lujhu, Kaohsiung, Taiwan aut NATIONALLICENCE 700 1- Tsai Mu-Tsun Department of Materials Science and Engineering, National Formosa University, 632, Huwei, Yunlin, Taiwan aut NATIONALLICENCE 700 1- Chai Yin-Lai Department of Jewelry Technology, Dahan Institute of Technology, 971, Hualien, Taiwan aut NATIONALLICENCE 700 1- Chang Yee-Shin Department of Electronic Engineering, National Formosa University, 632, Huwei, Yunlin, Taiwan aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/1(2013-01-01), 156-161 0361-5235 42:1<156 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer