naa a22 4500 510800564 CHVBK 20180411083353.0 cr unu---uuuuu 180411e20130101xx s 000 0 eng 10.1007/s11664-012-2315-z doi (NATIONALLICENCE)springer-10.1007/s11664-012-2315-z Modeling of a Room-Temperature Silicon Quantum Dot-Based Single-Electron Transistor and the Effect of Energy-Level Broadening on Its Performance [Elektronische Daten] [M. Miralaie, M. Leilaeioun, K. Abbasian] In this work, we have modeled silicon quantum dot (QD)-based single-electron transistors (SETs) operating at room temperature and investigated the effect of the QD's energy-level broadening on the performance of the SET. First we obtained the energy levels and corresponding wave functions for spherical Si QDs by solving the coupled Schrödinger-Poisson equations in three dimensions. Then, we demonstrated different tunneling current rates for separated energy levels by considering nonequal energy-level broadenings. Accordingly, an expression for the corresponding tunneling rates in the quantum Coulomb blockade regime was derived. In the next step, the transconductance characteristics of the Si QD SET device with Coulomb oscillations were simulated, and their differences from previously investigated metal-based SETs were demonstrated. Finally, by applying different bias voltages, we determined the effect of temperature variations on the transconductance characteristics. TMS, 2012 Single-electron transistor (SET) nationallicence Si QD energy-level broadening nationallicence transconductance characteristics nationallicence Coulomb blockade regime nationallicence Miralaie M. School of Engineering Emerging Technologies, University of Tabriz, 51664, Tabriz, Iran aut Leilaeioun M. School of Engineering Emerging Technologies, University of Tabriz, 51664, Tabriz, Iran aut Abbasian K. School of Engineering Emerging Technologies, University of Tabriz, 51664, Tabriz, Iran aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/1(2013-01-01), 47-57 0361-5235 42:1<47 2013 42 11664 https://doi.org/10.1007/s11664-012-2315-z text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-012-2315-z text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Miralaie M. School of Engineering Emerging Technologies, University of Tabriz, 51664, Tabriz, Iran aut NATIONALLICENCE 700 1- Leilaeioun M. School of Engineering Emerging Technologies, University of Tabriz, 51664, Tabriz, Iran aut NATIONALLICENCE 700 1- Abbasian K. School of Engineering Emerging Technologies, University of Tabriz, 51664, Tabriz, Iran aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/1(2013-01-01), 47-57 0361-5235 42:1<47 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer