naa a22 4500 510800580 CHVBK 20180411083353.0 cr unu---uuuuu 180411e20130101xx s 000 0 eng 10.1007/s11664-012-2300-6 doi (NATIONALLICENCE)springer-10.1007/s11664-012-2300-6 High-Temperature Thermoelectric Properties of Compoundsin the System Zn x In y O x +1.5 y [Elektronische Daten] [Matin Amani, Ian Tougas, Otto Gregory, Gustave Fralick] Based on results obtained utilizing combinatorial chemistry techniques to screen the thermoelectric power factor of materials in the system Zn x In y O x+1.5y , several multiphase candidates were down-selected and investigated in terms of their thermoelectric response from room temperature to 1050°C. While the screening experiments suggested that peaks in the power factor occur at relatively high indium oxide content, only the thermoelectric properties of zinc-oxide-rich homologous layered phases in the system (In2O3)(ZnO) k have been well documented, since the phases where k<3 cannot be easily formed. In the present study, indium-oxide-rich materials in the system In2O3-(In2O3)(ZnO)3 were fabricated and their figures of merit were determined. The results suggest that the indium-oxide-rich phases have improved figures of merit, especially at elevated temperatures, relative to the best performing k phases by combining the high power factor of In2O3 and the low thermal conductivity of (In2O3)(ZnO) k . TMS, 2012 In2O3 nationallicence ZnO nationallicence (In2O3)(ZnO) k nationallicence thermoelectrics nationallicence oxides nationallicence Amani Matin Department of Chemical Engineering, University of Rhode Island, 02881, Kingston, RI, USA aut Tougas Ian Department of Chemical Engineering, University of Rhode Island, 02881, Kingston, RI, USA aut Gregory Otto Department of Chemical Engineering, University of Rhode Island, 02881, Kingston, RI, USA aut Fralick Gustave NASA Glenn Research Center, 44135, Cleveland, OH, USA aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/1(2013-01-01), 114-120 0361-5235 42:1<114 2013 42 11664 https://doi.org/10.1007/s11664-012-2300-6 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-012-2300-6 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Amani Matin Department of Chemical Engineering, University of Rhode Island, 02881, Kingston, RI, USA aut NATIONALLICENCE 700 1- Tougas Ian Department of Chemical Engineering, University of Rhode Island, 02881, Kingston, RI, USA aut NATIONALLICENCE 700 1- Gregory Otto Department of Chemical Engineering, University of Rhode Island, 02881, Kingston, RI, USA aut NATIONALLICENCE 700 1- Fralick Gustave NASA Glenn Research Center, 44135, Cleveland, OH, USA aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/1(2013-01-01), 114-120 0361-5235 42:1<114 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer