naa a22 4500 510800599 CHVBK 20180411083353.0 cr unu---uuuuu 180411e20130101xx s 000 0 eng 10.1007/s11664-012-2246-8 doi (NATIONALLICENCE)springer-10.1007/s11664-012-2246-8 Effects of H2O Pretreatment on the Capacitance-Voltage Characteristics of Atomic-Layer-Deposited Al2O3 on Ga-Face GaN Metal-Oxide-Semiconductor Capacitors [Elektronische Daten] [Xiang Liu, Ramya Yeluri, Jing Lu, Umesh Mishra] Atomic layer deposition (ALD) of Al2O3 on Ga-face GaN is studied with respect to the effects of growth saturation, precursor injection sequence, and H2O pretreatment. A metal-oxide-semiconductor capacitor (MOSCAP) structure is fabricated to measure the capacitance-voltage (C-V) characteristics. The origin of C-V hysteresis is explained by a model considering the different trapping behaviors of interface states and oxide border traps. The interface state density (D it) is extracted as a function of band bending using an ultraviolet (UV)-assisted method. It is found that H2O pretreatment followed by saturated ALD growth produces the best interface quality, with a reduced D it compared with growth without H2O pretreatment. TMS, 2012 GaN nationallicence Al2O3 nationallicence atomic layer deposition nationallicence interface states nationallicence traps nationallicence hysteresis nationallicence MOSCAP nationallicence Liu Xiang Department of Electrical and Computer Engineering, University of California, 93106-9560, Santa Barbara, CA, USA aut Yeluri Ramya Department of Electrical and Computer Engineering, University of California, 93106-9560, Santa Barbara, CA, USA aut Lu Jing Department of Electrical and Computer Engineering, University of California, 93106-9560, Santa Barbara, CA, USA aut Mishra Umesh Department of Electrical and Computer Engineering, University of California, 93106-9560, Santa Barbara, CA, USA aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/1(2013-01-01), 33-39 0361-5235 42:1<33 2013 42 11664 https://doi.org/10.1007/s11664-012-2246-8 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-012-2246-8 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Liu Xiang Department of Electrical and Computer Engineering, University of California, 93106-9560, Santa Barbara, CA, USA aut NATIONALLICENCE 700 1- Yeluri Ramya Department of Electrical and Computer Engineering, University of California, 93106-9560, Santa Barbara, CA, USA aut NATIONALLICENCE 700 1- Lu Jing Department of Electrical and Computer Engineering, University of California, 93106-9560, Santa Barbara, CA, USA aut NATIONALLICENCE 700 1- Mishra Umesh Department of Electrical and Computer Engineering, University of California, 93106-9560, Santa Barbara, CA, USA aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/1(2013-01-01), 33-39 0361-5235 42:1<33 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer