naa a22 4500 510800629 CHVBK 20180411083353.0 cr unu---uuuuu 180411e20130101xx s 000 0 eng 10.1007/s11664-012-2323-z doi (NATIONALLICENCE)springer-10.1007/s11664-012-2323-z Microstructure of GaN1− x Bi x [Elektronische Daten] [Z. Liliental-Weber, R. Dos Reis, A.X. Levander, K.M. Yu, W. Walukiewicz, S.V. Novikov, C.T. Foxon] In this paper we describe detailed transmission electron microscopy studies of GaN1−x Bi x with 0.05<x<0.18 grown by low-temperature molecular beam epitaxy under Ga-rich conditions. Microstructural transformation from columnar growth separated by thin amorphous areas in the films with lowest Bi content (5%) to pseudo-amorphous structure with crystalline grains embedded in the amorphous matrix in the samples with higher Bi content (13% to 18%) was observed. In addition, metallic Bi segregation occurred in the samples with the highest Bi concentration. An abrupt decrease in absorption edge energy is found in samples with higher Bi content. TMS (outside the USA), 2012 Microstructure nationallicence TEM nationallicence GaNBi nationallicence highly mismatched semiconductors nationallicence absorption nationallicence bandgap nationallicence Liliental-Weber Z. Materials Sciences Division, Lawrence Berkeley National Laboratory, 94720, Berkeley, CA, USA aut Dos Reis R. Materials Sciences Division, Lawrence Berkeley National Laboratory, 94720, Berkeley, CA, USA aut Levander A.X. Materials Sciences Division, Lawrence Berkeley National Laboratory, 94720, Berkeley, CA, USA aut Yu K.M. Materials Sciences Division, Lawrence Berkeley National Laboratory, 94720, Berkeley, CA, USA aut Walukiewicz W. Materials Sciences Division, Lawrence Berkeley National Laboratory, 94720, Berkeley, CA, USA aut Novikov S.V. School of Physics and Astronomy, University of Nottingham, NG7 2RD, Nottingham, UK aut Foxon C.T. School of Physics and Astronomy, University of Nottingham, NG7 2RD, Nottingham, UK aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/1(2013-01-01), 26-32 0361-5235 42:1<26 2013 42 11664 https://doi.org/10.1007/s11664-012-2323-z text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-012-2323-z text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Liliental-Weber Z. Materials Sciences Division, Lawrence Berkeley National Laboratory, 94720, Berkeley, CA, USA aut NATIONALLICENCE 700 1- Dos Reis R. Materials Sciences Division, Lawrence Berkeley National Laboratory, 94720, Berkeley, CA, USA aut NATIONALLICENCE 700 1- Levander A.X. Materials Sciences Division, Lawrence Berkeley National Laboratory, 94720, Berkeley, CA, USA aut NATIONALLICENCE 700 1- Yu K.M. Materials Sciences Division, Lawrence Berkeley National Laboratory, 94720, Berkeley, CA, USA aut NATIONALLICENCE 700 1- Walukiewicz W. Materials Sciences Division, Lawrence Berkeley National Laboratory, 94720, Berkeley, CA, USA aut NATIONALLICENCE 700 1- Novikov S.V. School of Physics and Astronomy, University of Nottingham, NG7 2RD, Nottingham, UK aut NATIONALLICENCE 700 1- Foxon C.T. School of Physics and Astronomy, University of Nottingham, NG7 2RD, Nottingham, UK aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/1(2013-01-01), 26-32 0361-5235 42:1<26 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer