naa a22 4500 510800637 CHVBK 20180411083353.0 cr unu---uuuuu 180411e20130101xx s 000 0 eng 10.1007/s11664-012-2334-9 doi (NATIONALLICENCE)springer-10.1007/s11664-012-2334-9 Experimental Evaluation of the Effect of Pad Debris Size on Microscratches during CMP Process [Elektronische Daten] [Ji Yang, Hojoong Kim, Dong Oh, Jai-Hyung Won, Chil-Gee Lee, Taesung Kim] Polishing debris generated by pad surface conditioning has been suspected as a major source of microscratches in the chemical-mechanical planarization (CMP) process. In this study, we investigated the pad debris generated by an insitu conditioning process during oxide CMP as one of the major scratch sources. We evaluated the relationship between the size of pad debris and the shape of microscratches on a wafer to find the cause of scratches. Pad debris was gathered in real time during the polishing process. Then, by transmission electron microscopy we observed a mixed layer of pad material and abrasive particles on the surface of the pad debris and the pad surface, which hardened the pad debris and pad surface. The results reveal a size range of pad debris that led to a minimum scratch count. Pad debris size smaller or larger than the minimum scratch region seems to cause higher scratch count due to the hardened pad surface and pad debris. TMS, 2012 Chemical-mechanical planarization nationallicence microscratch nationallicence polishing debris nationallicence Yang Ji Memory Division, Device Solution Business, Samsung Electronics, Hwasung, Gyeonggi-do, South Korea aut Kim Hojoong Sungkyunkwan Advanced Institute of Nanotechnology, Sungkyunkwan University, 440-746, Suwon, Gyoenggi-do, South Korea aut Oh Dong Memory Division, Device Solution Business, Samsung Electronics, Hwasung, Gyeonggi-do, South Korea aut Won Jai-Hyung Memory Division, Device Solution Business, Samsung Electronics, Hwasung, Gyeonggi-do, South Korea aut Lee Chil-Gee Department of Semiconductor and Display, Sungkyunkwan University, 440-746, Suwon, South Korea aut Kim Taesung Sungkyunkwan Advanced Institute of Nanotechnology, Sungkyunkwan University, 440-746, Suwon, Gyoenggi-do, South Korea aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/1(2013-01-01), 97-102 0361-5235 42:1<97 2013 42 11664 https://doi.org/10.1007/s11664-012-2334-9 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-012-2334-9 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Yang Ji Memory Division, Device Solution Business, Samsung Electronics, Hwasung, Gyeonggi-do, South Korea aut NATIONALLICENCE 700 1- Kim Hojoong Sungkyunkwan Advanced Institute of Nanotechnology, Sungkyunkwan University, 440-746, Suwon, Gyoenggi-do, South Korea aut NATIONALLICENCE 700 1- Oh Dong Memory Division, Device Solution Business, Samsung Electronics, Hwasung, Gyeonggi-do, South Korea aut NATIONALLICENCE 700 1- Won Jai-Hyung Memory Division, Device Solution Business, Samsung Electronics, Hwasung, Gyeonggi-do, South Korea aut NATIONALLICENCE 700 1- Lee Chil-Gee Department of Semiconductor and Display, Sungkyunkwan University, 440-746, Suwon, South Korea aut NATIONALLICENCE 700 1- Kim Taesung Sungkyunkwan Advanced Institute of Nanotechnology, Sungkyunkwan University, 440-746, Suwon, Gyoenggi-do, South Korea aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/1(2013-01-01), 97-102 0361-5235 42:1<97 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer