<?xml version="1.0" encoding="UTF-8"?>
<collection xmlns="http://www.loc.gov/MARC21/slim">
 <record>
  <leader>     naa a22        4500</leader>
  <controlfield tag="001">510800645</controlfield>
  <controlfield tag="003">CHVBK</controlfield>
  <controlfield tag="005">20180411083353.0</controlfield>
  <controlfield tag="007">cr unu---uuuuu</controlfield>
  <controlfield tag="008">180411e20130101xx      s     000 0 eng  </controlfield>
  <datafield tag="024" ind1="7" ind2="0">
   <subfield code="a">10.1007/s11664-012-2332-y</subfield>
   <subfield code="2">doi</subfield>
  </datafield>
  <datafield tag="035" ind1=" " ind2=" ">
   <subfield code="a">(NATIONALLICENCE)springer-10.1007/s11664-012-2332-y</subfield>
  </datafield>
  <datafield tag="100" ind1="1" ind2=" ">
   <subfield code="a">Gökçen</subfield>
   <subfield code="D">M.</subfield>
   <subfield code="u">Department of Physics, Faculty of Arts and Sciences, Düzce University, 81620, Düzce, Turkey</subfield>
   <subfield code="4">aut</subfield>
  </datafield>
  <datafield tag="245" ind1="1" ind2="0">
   <subfield code="a">Dielectric Properties of Au/PVA (Cobalt-Doped)/ n -Si Photoconductive Diodes</subfield>
   <subfield code="h">[Elektronische Daten]</subfield>
   <subfield code="c">[M. Gökçen]</subfield>
  </datafield>
  <datafield tag="520" ind1="3" ind2=" ">
   <subfield code="a">The voltage (V) and frequency (f) dependence of dielectric parameters such as the dielectric constant (ε′), dielectric loss (ε″), dielectric loss tangent (tanδ), real and imaginary parts of electrical modulus (M′ and M″), and alternating-current (AC) electrical conductivity (σ AC) of Au/PVA (cobalt-doped)/n-Si structures have been investigated by using experimental admittance measurements conducted at room temperature. The values of ε′, ε″, and tanδ were found to be strong functions of voltage and frequency, especially at low frequencies in the positive voltage region. It was observed that the values of ε′ and ε″ increase as the frequency decreases. The M′ values increase with increasing frequency due to increasing dielectric relaxation, while M″ values, in general, remain stable as frequency is changed. The σ AC values at each bias voltage increase with increasing frequency.</subfield>
  </datafield>
  <datafield tag="540" ind1=" " ind2=" ">
   <subfield code="a">TMS, 2012</subfield>
  </datafield>
  <datafield tag="690" ind1=" " ind2="7">
   <subfield code="a">Organic PVA layer</subfield>
   <subfield code="2">nationallicence</subfield>
  </datafield>
  <datafield tag="690" ind1=" " ind2="7">
   <subfield code="a">MPS structures</subfield>
   <subfield code="2">nationallicence</subfield>
  </datafield>
  <datafield tag="690" ind1=" " ind2="7">
   <subfield code="a">dielectric properties</subfield>
   <subfield code="2">nationallicence</subfield>
  </datafield>
  <datafield tag="690" ind1=" " ind2="7">
   <subfield code="a">electric modulus</subfield>
   <subfield code="2">nationallicence</subfield>
  </datafield>
  <datafield tag="690" ind1=" " ind2="7">
   <subfield code="a">AC electrical conductivity</subfield>
   <subfield code="2">nationallicence</subfield>
  </datafield>
  <datafield tag="773" ind1="0" ind2=" ">
   <subfield code="t">Journal of Electronic Materials</subfield>
   <subfield code="d">Springer US; http://www.springer-ny.com</subfield>
   <subfield code="g">42/1(2013-01-01), 103-108</subfield>
   <subfield code="x">0361-5235</subfield>
   <subfield code="q">42:1&lt;103</subfield>
   <subfield code="1">2013</subfield>
   <subfield code="2">42</subfield>
   <subfield code="o">11664</subfield>
  </datafield>
  <datafield tag="856" ind1="4" ind2="0">
   <subfield code="u">https://doi.org/10.1007/s11664-012-2332-y</subfield>
   <subfield code="q">text/html</subfield>
   <subfield code="z">Onlinezugriff via DOI</subfield>
  </datafield>
  <datafield tag="908" ind1=" " ind2=" ">
   <subfield code="D">1</subfield>
   <subfield code="a">research-article</subfield>
   <subfield code="2">jats</subfield>
  </datafield>
  <datafield tag="950" ind1=" " ind2=" ">
   <subfield code="B">NATIONALLICENCE</subfield>
   <subfield code="P">856</subfield>
   <subfield code="E">40</subfield>
   <subfield code="u">https://doi.org/10.1007/s11664-012-2332-y</subfield>
   <subfield code="q">text/html</subfield>
   <subfield code="z">Onlinezugriff via DOI</subfield>
  </datafield>
  <datafield tag="950" ind1=" " ind2=" ">
   <subfield code="B">NATIONALLICENCE</subfield>
   <subfield code="P">100</subfield>
   <subfield code="E">1-</subfield>
   <subfield code="a">Gökçen</subfield>
   <subfield code="D">M.</subfield>
   <subfield code="u">Department of Physics, Faculty of Arts and Sciences, Düzce University, 81620, Düzce, Turkey</subfield>
   <subfield code="4">aut</subfield>
  </datafield>
  <datafield tag="950" ind1=" " ind2=" ">
   <subfield code="B">NATIONALLICENCE</subfield>
   <subfield code="P">773</subfield>
   <subfield code="E">0-</subfield>
   <subfield code="t">Journal of Electronic Materials</subfield>
   <subfield code="d">Springer US; http://www.springer-ny.com</subfield>
   <subfield code="g">42/1(2013-01-01), 103-108</subfield>
   <subfield code="x">0361-5235</subfield>
   <subfield code="q">42:1&lt;103</subfield>
   <subfield code="1">2013</subfield>
   <subfield code="2">42</subfield>
   <subfield code="o">11664</subfield>
  </datafield>
  <datafield tag="900" ind1=" " ind2="7">
   <subfield code="a">Metadata rights reserved</subfield>
   <subfield code="b">Springer special CC-BY-NC licence</subfield>
   <subfield code="2">nationallicence</subfield>
  </datafield>
  <datafield tag="898" ind1=" " ind2=" ">
   <subfield code="a">BK010053</subfield>
   <subfield code="b">XK010053</subfield>
   <subfield code="c">XK010000</subfield>
  </datafield>
  <datafield tag="949" ind1=" " ind2=" ">
   <subfield code="B">NATIONALLICENCE</subfield>
   <subfield code="F">NATIONALLICENCE</subfield>
   <subfield code="b">NL-springer</subfield>
  </datafield>
 </record>
</collection>
