naa a22 4500 510800653 CHVBK 20180411083353.0 cr unu---uuuuu 180411e20130101xx s 000 0 eng 10.1007/s11664-012-2278-0 doi (NATIONALLICENCE)springer-10.1007/s11664-012-2278-0 Implantation Studies on Silicon-Doped GaN [Elektronische Daten] [Ronnie Simon, Reiner Vianden, Klaus Köhler] Silicon-doped GaN layers grown by low-pressure metalorganic vapor-phase epitaxy with Si concentrations ranging from 2×1017Si/cm3 to 9.2×1018 Si/cm3 were investigated by means of the perturbed angular correlation (PAC) technique applied to implanted 111In(Cd). An undoped GaN film is used as a reference. The Si atoms replace Ga atoms in the lattice, and silicon, being a groupIV element, acts as a donor on the Ga site and contributes one extra electron to the conduction band. Hall-effect measurements confirmed that the free charge carrier density is essentially increased and of the order of the silicon concentration. PAC investigations of the annealing behavior after implantation of the 111In probes show that best recovery is achieved after annealing at 1200K and that high silicon concentrations make GaN films more stable at high temperatures. Further, it was found that the temperature dependence of the electric field gradient is reduced by increasing Si concentrations. TMS, 2012 Nitride semiconductor nationallicence implantation nationallicence annealing nationallicence perturbed angular correlation nationallicence Simon Ronnie Helmholtz-Institut für Strahlen- und Kernphysik, 53115, Bonn, Germany aut Vianden Reiner Helmholtz-Institut für Strahlen- und Kernphysik, 53115, Bonn, Germany aut Köhler Klaus Fraunhofer Institut für angewandte Festkörperphysik (IAF), 79108, Freiburg, Germany aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/1(2013-01-01), 21-25 0361-5235 42:1<21 2013 42 11664 https://doi.org/10.1007/s11664-012-2278-0 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-012-2278-0 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Simon Ronnie Helmholtz-Institut für Strahlen- und Kernphysik, 53115, Bonn, Germany aut NATIONALLICENCE 700 1- Vianden Reiner Helmholtz-Institut für Strahlen- und Kernphysik, 53115, Bonn, Germany aut NATIONALLICENCE 700 1- Köhler Klaus Fraunhofer Institut für angewandte Festkörperphysik (IAF), 79108, Freiburg, Germany aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/1(2013-01-01), 21-25 0361-5235 42:1<21 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer