naa a22 4500 510800661 CHVBK 20180411083353.0 cr unu---uuuuu 180411e20130101xx s 000 0 eng 10.1007/s11664-012-2335-8 doi (NATIONALLICENCE)springer-10.1007/s11664-012-2335-8 Transformation-Induced Plasticity in Sn-In Solder Joints [Elektronische Daten] [K.-O. Lee, J.W. Morris Jr., Fay Hua] The research reported here concerns the contribution of transformation- induced plasticity (TRIP) to the shear deformation of Sn-xwt.%In solders with Cu or Ni metallization, where the In content (x) ranges from 9wt.% to 15wt.%. In this concentration range the high-temperature γ-phase (hexagonal structure) transforms to the low-temperature β-phase (β-Sn structure) on cooling, and the transformation can be martensitic. The results show that Sn-9In and Sn-11In solder joints do exhibit TRIP that significantly enhances their ductility when tested at temperatures between the deformation-induced martensite temperature (M d) and the stress-induced martensite temperature (M y). For Sn-9In, M d≈105°C, and the TRIP effect is optimal near M y≈80°C, where the total elongation reaches ~100% when the substrate metallization is Cu. The TRIP elongation is less spectacular with Ni metallization because of weakness at the solder-substrate interface. Sn-11wt.%In joints also show extensive TRIP effect, with an M d temperature near 60°C, and an M y of 35°C or less. The total elongation of 11wt.% In joints on Cu reaches 350% at 35°C. Sn-15wt.%In joints with Cu metallization also have excellent ductility at low temperature, with total elongation of ~50% at 35°C. In this case, however, the excellent ductility is due to the fine-grained, two-phase microstructure of the solder rather than any TRIP effect. TMS, 2012 Pb-free solder nationallicence TRIP nationallicence shear test nationallicence superplasticity nationallicence solder joint nationallicence Lee K.-O Department of Materials Science and Engineering, University of California, 94720, Berkeley, CA, USA aut Morris Jr. J.W. Department of Materials Science and Engineering, University of California, 94720, Berkeley, CA, USA aut Hua Fay Intel Corporation, 95054, Sunnyvale, CA, USA aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/1(2013-01-01), 168-178 0361-5235 42:1<168 2013 42 11664 https://doi.org/10.1007/s11664-012-2335-8 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-012-2335-8 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Lee K.-O Department of Materials Science and Engineering, University of California, 94720, Berkeley, CA, USA aut NATIONALLICENCE 700 1- Morris Jr J.W. Department of Materials Science and Engineering, University of California, 94720, Berkeley, CA, USA aut NATIONALLICENCE 700 1- Hua Fay Intel Corporation, 95054, Sunnyvale, CA, USA aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/1(2013-01-01), 168-178 0361-5235 42:1<168 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer