naa a22 4500 510800688 CHVBK 20180411083354.0 cr unu---uuuuu 180411e20130601xx s 000 0 eng 10.1007/s11664-013-2494-2 doi (NATIONALLICENCE)springer-10.1007/s11664-013-2494-2 Computational Investigation of the Evolution of Intermetallic Compounds Affected by Microvoids During the Solid-State Aging Process in the Cu-Sn System [Elektronische Daten] [M. Park, S. Gibbons, R. Arróyave] In this work, the impact of microvoids on the microstructural evolution of η-Cu6Sn5 and ɛ-Cu3Sn in the Cu-Sn system is evaluated numerically. Through the use of the multiphase-field method, the systems of interest are allowed to evolve using a solid-state aging temperature of 453K in conjunction with material parameters and reaction conditions adopted from previous research. The simulation results are then analyzed and compared with previous experiments in terms of the morphological evolution of the intermetallic compounds (IMCs), the IMC layer thicknesses, and the corresponding interfacial roughness. It is shown that the presence of microvoids at the ɛ/Cu interface interferes with the flow of mass throughout the phases, impeding phase transformations and grain coarsening. This ultimately affects the IMC coarsening rate and overall IMC layer thicknesses. Additionally, it was observed that the presence of microvoids at the ɛ/Cu interface affects the formation of both IMC layers and their corresponding interfaces, and the changes in roughness for the interfaces are quantitatively provided. Overall, the simulations are found to be within the range of accepted experimental values for the morphology of the IMC grains, the evolution of IMC layer thicknesses, and the evolution of interface roughness. TMS, 2013 Phase-field model nationallicence morphology nationallicence growth of Cu6Sn5 and Cu3Sn layer nationallicence roughness nationallicence microvoids nationallicence Park M. Department of Mechanical Engineering, Texas A&M University, 77843, College Station, USA aut Gibbons S. Materials Science and Engineering Program, Texas A&M University, 77843, College Station, USA aut Arróyave R. Department of Mechanical Engineering, Texas A&M University, 77843, College Station, USA aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/6(2013-06-01), 999-1009 0361-5235 42:6<999 2013 42 11664 https://doi.org/10.1007/s11664-013-2494-2 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2494-2 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Park M. Department of Mechanical Engineering, Texas A&M University, 77843, College Station, USA aut NATIONALLICENCE 700 1- Gibbons S. Materials Science and Engineering Program, Texas A&M University, 77843, College Station, USA aut NATIONALLICENCE 700 1- Arróyave R. Department of Mechanical Engineering, Texas A&M University, 77843, College Station, USA aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/6(2013-06-01), 999-1009 0361-5235 42:6<999 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer