naa a22 4500 510800696 CHVBK 20180411083354.0 cr unu---uuuuu 180411e20130601xx s 000 0 eng 10.1007/s11664-013-2503-5 doi (NATIONALLICENCE)springer-10.1007/s11664-013-2503-5 Study of Nitrogen Concentration in Silicon Carbide [Elektronische Daten] [Hui Wang, Cheng-Feng Yan, Hai-Kuan Kong, Jian-Jun Chen, Jun Xin, Er-Wei Shi, Jian-Hua Yang] This work focused on studying the nitrogen concentration (C N) in SiC. The variations of C N in the synthesis of SiC powder as well as the transport during SiC crystal growth have been investigated for broad ranges of temperature and Ar pressure. Before SiC crystal growth, SiC powders were synthesized from high-purity silicon and carbon powders. The concentrations of nitrogen, free C, and free Si in the as-prepared powders were all measured. C N in the SiC source powder decreased with increasing temperature and decreasing Ar pressure, whereas it did not show a remarkable trend with the molar ratio of free Si to free C. SiC crystal was then grown by the physical vapor transport (PVT) technique using the as-prepared powder. The distribution of C N in the remaining material indirectly indicated the temperature field of crystal growth. In addition, compared with introducing N2 during SiC crystal growth, doping with nitrogen during synthesis of the SiC source powder might be a better method to control C N in SiC crystals. TMS, 2013 Nitrogen concentration nationallicence silicon carbide nationallicence crystal growth nationallicence physical vapor transport nationallicence Wang Hui Shanghai Institute of Ceramics, Chinese Academy of Sciences, 215 Chengbei road, 201800, Shanghai, People's Republic of China aut Yan Cheng-Feng Shanghai Institute of Ceramics, Chinese Academy of Sciences, 215 Chengbei road, 201800, Shanghai, People's Republic of China aut Kong Hai-Kuan Shanghai Institute of Ceramics, Chinese Academy of Sciences, 215 Chengbei road, 201800, Shanghai, People's Republic of China aut Chen Jian-Jun Shanghai Institute of Ceramics, Chinese Academy of Sciences, 215 Chengbei road, 201800, Shanghai, People's Republic of China aut Xin Jun Shanghai Institute of Ceramics, Chinese Academy of Sciences, 215 Chengbei road, 201800, Shanghai, People's Republic of China aut Shi Er-Wei Shanghai Institute of Ceramics, Chinese Academy of Sciences, 215 Chengbei road, 201800, Shanghai, People's Republic of China aut Yang Jian-Hua Shanghai Institute of Ceramics, Chinese Academy of Sciences, 215 Chengbei road, 201800, Shanghai, People's Republic of China aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/6(2013-06-01), 1037-1041 0361-5235 42:6<1037 2013 42 11664 https://doi.org/10.1007/s11664-013-2503-5 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2503-5 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Wang Hui Shanghai Institute of Ceramics, Chinese Academy of Sciences, 215 Chengbei road, 201800, Shanghai, People's Republic of China aut NATIONALLICENCE 700 1- Yan Cheng-Feng Shanghai Institute of Ceramics, Chinese Academy of Sciences, 215 Chengbei road, 201800, Shanghai, People's Republic of China aut NATIONALLICENCE 700 1- Kong Hai-Kuan Shanghai Institute of Ceramics, Chinese Academy of Sciences, 215 Chengbei road, 201800, Shanghai, People's Republic of China aut NATIONALLICENCE 700 1- Chen Jian-Jun Shanghai Institute of Ceramics, Chinese Academy of Sciences, 215 Chengbei road, 201800, Shanghai, People's Republic of China aut NATIONALLICENCE 700 1- Xin Jun Shanghai Institute of Ceramics, Chinese Academy of Sciences, 215 Chengbei road, 201800, Shanghai, People's Republic of China aut NATIONALLICENCE 700 1- Shi Er-Wei Shanghai Institute of Ceramics, Chinese Academy of Sciences, 215 Chengbei road, 201800, Shanghai, People's Republic of China aut NATIONALLICENCE 700 1- Yang Jian-Hua Shanghai Institute of Ceramics, Chinese Academy of Sciences, 215 Chengbei road, 201800, Shanghai, People's Republic of China aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/6(2013-06-01), 1037-1041 0361-5235 42:6<1037 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer