naa a22 4500 51080070X CHVBK 20180411083354.0 cr unu---uuuuu 180411e20130601xx s 000 0 eng 10.1007/s11664-013-2542-y doi (NATIONALLICENCE)springer-10.1007/s11664-013-2542-y Thermoelectric Generators Using p -Pb0.925Yb0.075Te:Teand n -Pb0.925Yb0.075Se0.2Te0.8 Thin Films Preparedby the Thermal Evaporation Method [Elektronische Daten] [A. Hmood, A. Kadhim, J.J. Hassan, H. Abu Hassan] In this study, p-Pb0.925Yb0.075Te:Te and n-Pb0.925Yb0.075Se0.2Te0.8 ingots were used in a standard solid-state microwave synthesis route for fabricating thermally evaporated thin films. The nanostructure and composition of the films were studied through x-ray diffraction, field-emission scanning electron microscopy, and energy-dispersive x-ray spectroscopy. Measurements of the Seebeck coefficient and electrical conductivity were performed at 298K to 523K. The microthermoelectric devices were composed of 20 pairs and 10 pairs of p-Pb0.925Yb0.075Te:Te and n-Pb0.925Yb0.075Se0.2Te0.8 thin films on glass substrates, respectively. The 20-pair p-n thermocouples in series generated a maximum output open-circuit voltage of 275.3mV and a maximum output power of 54.37nW at a temperature difference ΔT=162K, and 109.4mV and 16.68nW at ΔT=162K for 10 pairs, respectively. TMS, 2013 Thin films nationallicence thermal evaporation method nationallicence thermoelectronics nationallicence thermoelectric generators nationallicence Hmood A. Nano-Optoelectronic Research and Technology Laboratory (N.O.R.), School of Physics, Universiti Sains Malaysia, 11800 USM, Penang, Malaysia aut Kadhim A. Nano-Optoelectronic Research and Technology Laboratory (N.O.R.), School of Physics, Universiti Sains Malaysia, 11800 USM, Penang, Malaysia aut Hassan J.J. Nano-Optoelectronic Research and Technology Laboratory (N.O.R.), School of Physics, Universiti Sains Malaysia, 11800 USM, Penang, Malaysia aut Abu Hassan H. Nano-Optoelectronic Research and Technology Laboratory (N.O.R.), School of Physics, Universiti Sains Malaysia, 11800 USM, Penang, Malaysia aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/6(2013-06-01), 1146-1153 0361-5235 42:6<1146 2013 42 11664 https://doi.org/10.1007/s11664-013-2542-y text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2542-y text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Hmood A. Nano-Optoelectronic Research and Technology Laboratory (N.O.R.), School of Physics, Universiti Sains Malaysia, 11800 USM, Penang, Malaysia aut NATIONALLICENCE 700 1- Kadhim A. Nano-Optoelectronic Research and Technology Laboratory (N.O.R.), School of Physics, Universiti Sains Malaysia, 11800 USM, Penang, Malaysia aut NATIONALLICENCE 700 1- Hassan J.J. Nano-Optoelectronic Research and Technology Laboratory (N.O.R.), School of Physics, Universiti Sains Malaysia, 11800 USM, Penang, Malaysia aut NATIONALLICENCE 700 1- Abu Hassan H. Nano-Optoelectronic Research and Technology Laboratory (N.O.R.), School of Physics, Universiti Sains Malaysia, 11800 USM, Penang, Malaysia aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/6(2013-06-01), 1146-1153 0361-5235 42:6<1146 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer