naa a22 4500 510800718 CHVBK 20180411083354.0 cr unu---uuuuu 180411e20130601xx s 000 0 eng 10.1007/s11664-013-2553-8 doi (NATIONALLICENCE)springer-10.1007/s11664-013-2553-8 Osvald J. Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, 841 04, Bratislava, Slovakia aut Interface Electron Traps as a Source of Anomalous Capacitance in AlGaN/GaN Heterostructures [Elektronische Daten] [J. Osvald] We studied by modeling and simulation how deep traps at the AlGaN/GaN heterostructure interface influence the shape of capacitance-voltage (C-V) curves of the heterostructure. Assuming donor and acceptor type of traps, we found differences in the C-V curves for sharp energy interface states or continuously distributed states with the same total concentration for the acceptor-type interface states. The background doping concentration of GaN had only a marginal influence on the shape of the C-V curves. We observed that an anomalous capacitance peak occurred for the continuous distribution of traps in the bandgap; a similar peak had been observed in experiment. We also saw that the capacitance curves shifted slightly to the right or to the left depending on the GaN doping concentration. A remarkable difference was found between the capacitance curves for the structures with the sharp acceptor trap level and continuous distribution of traps. For donor-type interface states, we found practically no influence on C-V curves since they remain populated and charge neutral during the measurement. TMS, 2013 III-V heterostructures nationallicence heterostructure capacitance nationallicence interface traps nationallicence deep levels nationallicence semiconductor traps nationallicence Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/6(2013-06-01), 1184-1189 0361-5235 42:6<1184 2013 42 11664 https://doi.org/10.1007/s11664-013-2553-8 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2553-8 text/html Onlinezugriff via DOI NATIONALLICENCE 100 1- Osvald J. Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, 841 04, Bratislava, Slovakia aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/6(2013-06-01), 1184-1189 0361-5235 42:6<1184 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer