naa a22 4500 510800734 CHVBK 20180411083354.0 cr unu---uuuuu 180411e20130601xx s 000 0 eng 10.1007/s11664-013-2510-6 doi (NATIONALLICENCE)springer-10.1007/s11664-013-2510-6 Effect of Composition on Thermoelectric Properties of Polycrystalline CrSi2 [Elektronische Daten] [S. Perumal, S. Gorsse, U. Ail, R. Decourt, A. Umarji] Ingots with compositions CrSi2−x (with 0<x<0.1) were synthesized by vacuum arc melting followed by uniaxial hot pressing for densification. This paper reports the temperature and composition dependence of the electrical resistivity, Seebeck coefficient, and thermal conductivity of CrSi2−x samples in the temperature range of 300K to 800K. The silicon-deficient samples exhibited substantial reductions in resistivity and Seebeck coefficient over the measured temperature range due to the formation of metallic secondary CrSi phase embedded in the CrSi2 matrix phase. The thermal conductivity was seen to exhibit a U-shaped curve with respect to x, exhibiting a minimum value at the composition of x=0.04. However, the limit of the homogeneity range of CrSi2 suppresses any further decrease of the lattice thermal conductivity. As a consequence, the maximum figure of merit of ZT=0.1 is obtained at 650K for CrSi1.98. TMS, 2013 Thermoelectric materials nationallicence chromium disilicide nationallicence intermetallics nationallicence Perumal S. Materials Research Centre, Indian Institute of Science, 560012, Bangalore, India aut Gorsse S. Univ. Bordeaux, ICMCB, CNRS, F-33608, Pessac, France aut Ail U. Univ. Bordeaux, ICMCB, CNRS, F-33608, Pessac, France aut Decourt R. Univ. Bordeaux, ICMCB, CNRS, F-33608, Pessac, France aut Umarji A. Materials Research Centre, Indian Institute of Science, 560012, Bangalore, India aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/6(2013-06-01), 1042-1046 0361-5235 42:6<1042 2013 42 11664 https://doi.org/10.1007/s11664-013-2510-6 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2510-6 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Perumal S. Materials Research Centre, Indian Institute of Science, 560012, Bangalore, India aut NATIONALLICENCE 700 1- Gorsse S. Univ. Bordeaux, ICMCB, CNRS, F-33608, Pessac, France aut NATIONALLICENCE 700 1- Ail U. Univ. Bordeaux, ICMCB, CNRS, F-33608, Pessac, France aut NATIONALLICENCE 700 1- Decourt R. Univ. Bordeaux, ICMCB, CNRS, F-33608, Pessac, France aut NATIONALLICENCE 700 1- Umarji A. Materials Research Centre, Indian Institute of Science, 560012, Bangalore, India aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/6(2013-06-01), 1042-1046 0361-5235 42:6<1042 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer