naa a22 4500 510800742 CHVBK 20180411083354.0 cr unu---uuuuu 180411e20130601xx s 000 0 eng 10.1007/s11664-013-2524-0 doi (NATIONALLICENCE)springer-10.1007/s11664-013-2524-0 Analysis of the Temperature Dependence of the Capacitance-Voltage and Conductance-Voltage Characteristics of Au/TiO2(rutile)/ n -Si Structures [Elektronische Daten] [BarIş KInacI, Süleyman Özçelik] The capacitance-voltage-temperature (C-V-T) and the conductance/angular frequency-voltage-temperature (G/ω-V-T) characteristics of Au/TiO2(rutile)/n-Si Schottky barrier diodes (SBDs) were investigated over the temperature range from 200K to 380K by considering the series resistance effect. Titanium dioxide (TiO2) was deposited on n-type silicon (Si) substrate using a direct-current (DC) magnetron sputtering system at 200°C. To improve the crystal quality, the deposited film was annealed at 900°C to promote a phase transition from the amorphous to rutile phase. The C −2 versus V plots gave a straight line in the reverse-bias region. The main electrical parameters, such as the doping concentration (N D), Fermi energy level (E F), depletion layer width (W D), barrier height (ф CV), and series resistance (R S), of Au/TiO2(rutile)/n-Si SBDs were calculated from the C-V-T and the G/ω-V-T characteristics. The obtained results show that ф CV, R S, and W D values decrease, while E F and N D values increase, with increasing temperature. TMS, 2013 TiO2(rutile) nationallicence DC magnetron sputtering nationallicence capacitance-voltage-temperature characteristic nationallicence conductance-voltage-temperature characteristic nationallicence KInacI BarIş Department of Physics, Faculty of Science, Gazi University, 06500, Ankara, Turkey aut Özçelik Süleyman Department of Physics, Faculty of Science, Gazi University, 06500, Ankara, Turkey aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/6(2013-06-01), 1108-1113 0361-5235 42:6<1108 2013 42 11664 https://doi.org/10.1007/s11664-013-2524-0 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2524-0 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- KInacI BarIş Department of Physics, Faculty of Science, Gazi University, 06500, Ankara, Turkey aut NATIONALLICENCE 700 1- Özçelik Süleyman Department of Physics, Faculty of Science, Gazi University, 06500, Ankara, Turkey aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/6(2013-06-01), 1108-1113 0361-5235 42:6<1108 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer