naa a22 4500 510800750 CHVBK 20180411083354.0 cr unu---uuuuu 180411e20130601xx s 000 0 eng 10.1007/s11664-013-2561-8 doi (NATIONALLICENCE)springer-10.1007/s11664-013-2561-8 Simplification of Low-Temperature Sintering Nanosilver for Power Electronics Packaging [Elektronische Daten] [Yunhui Mei, Gang Chen, Yunjiao Cao, Xin Li, Dan Han, Xu Chen] Conventional solders cannot meet the requirements for high-temperature applications. Recently, a low-temperature sintering technique involving a nanosilver paste has been developed for attaching semiconductor chips to substrates. Sintered nanosilver joints showed high reliability in high-temperature applications. We used the nanosilver paste to attach 10mm× 10mm chips by introducing a pressure as low as only 1MPa during drying at 185°C. Die-shear tests showed that shear strengths of higher than 50MPa could be generated by applying 5MPa at 225°C for only 10s or 1MPa at 150°C for 600s, followed by sintering for only 60s at 275°C. The sintering temperature could be reduced to 250°C in most applications with a slight reduction in shear strength. As a result of good bonding, significant plastic flow and ductile fracture of the sheared silver joint could be observed by scanning electron microscopy (SEM). SEM also showed that the fracture of the sheared silver joint was a cohesive failure. TMS, 2013 Nanosilver nationallicence sintering nationallicence pressure-assisted nationallicence electronic packaging nationallicence shear strength nationallicence microstructures nationallicence Mei Yunhui Tianjin Key Laboratory of Advanced Joining Technology and School of Materials Science and Engineering, Tianjin University, Tianjin, People's Republic of China aut Chen Gang School of Chemical Engineering and Technology, Tianjin University, Tianjin, People's Republic of China aut Cao Yunjiao School of Chemical Engineering and Technology, Tianjin University, Tianjin, People's Republic of China aut Li Xin Tianjin Key Laboratory of Advanced Joining Technology and School of Materials Science and Engineering, Tianjin University, Tianjin, People's Republic of China aut Han Dan School of Chemical Engineering and Technology, Tianjin University, Tianjin, People's Republic of China aut Chen Xu School of Chemical Engineering and Technology, Tianjin University, Tianjin, People's Republic of China aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/6(2013-06-01), 1209-1218 0361-5235 42:6<1209 2013 42 11664 https://doi.org/10.1007/s11664-013-2561-8 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2561-8 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Mei Yunhui Tianjin Key Laboratory of Advanced Joining Technology and School of Materials Science and Engineering, Tianjin University, Tianjin, People's Republic of China aut NATIONALLICENCE 700 1- Chen Gang School of Chemical Engineering and Technology, Tianjin University, Tianjin, People's Republic of China aut NATIONALLICENCE 700 1- Cao Yunjiao School of Chemical Engineering and Technology, Tianjin University, Tianjin, People's Republic of China aut NATIONALLICENCE 700 1- Li Xin Tianjin Key Laboratory of Advanced Joining Technology and School of Materials Science and Engineering, Tianjin University, Tianjin, People's Republic of China aut NATIONALLICENCE 700 1- Han Dan School of Chemical Engineering and Technology, Tianjin University, Tianjin, People's Republic of China aut NATIONALLICENCE 700 1- Chen Xu School of Chemical Engineering and Technology, Tianjin University, Tianjin, People's Republic of China aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/6(2013-06-01), 1209-1218 0361-5235 42:6<1209 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer