naa a22 4500 510800807 CHVBK 20180411083354.0 cr unu---uuuuu 180411e20130601xx s 000 0 eng 10.1007/s11664-013-2573-4 doi (NATIONALLICENCE)springer-10.1007/s11664-013-2573-4 Flexible Transparent ZnO:Al/ZnO/CuAlO x :Ca Heterojunction Diodes on Polyethylene Terephthalate Substrates [Elektronische Daten] [Chu-Te Chi, I-Feng Lu, I-Chung Chiu, Po-Yuan Chen, Bo-Wei Huang, I-Chun Cheng, Jian-Zhang Chen] Transparent flexible n +-ZnO:Al (100nm)/n-ZnO (40nm)/p-CuAlO x :Ca (100nm, 200nm, 300nm) diodes were fabricated on polyethylene terephthalate substrates at room temperature using a sputtering technique. No additional heat treatment was performed on the fabricated devices. Increase of the diode layer thickness reduced the on-current and leakage-current levels simultaneously, which led the rectification ratio to first increase and then decrease as the p-layer thickness increased. The ultraviolet (UV) response of the diode was also investigated under irradiation at 365nm. The n +-ZnO:Al (100nm)/n-ZnO (40nm)/p-CuAlO x :Ca (200nm) diode exhibited photocurrent/leakage current ratio of 1.03×103 and responsivity of 0.64A/W at reverse bias of −6V when measured in flat status. The corresponding photocurrent/leakage current ratio and responsivity were 7.99×102 and 0.65A/W, respectively, for an outwardly bent diode with 5.5cm radius of curvature. The increases of current levels under bending are attributed to the decreases of series resistance for the diode under tensile strain. TMS, 2013 Ca-doped CuAlO x nationallicence sputtering nationallicence oxide electronics nationallicence diodes nationallicence flexible electronics nationallicence large-area electronics nationallicence Chi Chu-Te Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, Taiwan aut Lu I-Feng Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, Taiwan aut Chiu I-Chung Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, Taiwan aut Chen Po-Yuan Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, Taiwan aut Huang Bo-Wei Graduate Institute of Applied Mechanics, National Taiwan University, Taipei, Taiwan aut Cheng I-Chun Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, Taiwan aut Chen Jian-Zhang Graduate Institute of Applied Mechanics, National Taiwan University, Taipei, Taiwan aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/6(2013-06-01), 1242-1245 0361-5235 42:6<1242 2013 42 11664 https://doi.org/10.1007/s11664-013-2573-4 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2573-4 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Chi Chu-Te Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, Taiwan aut NATIONALLICENCE 700 1- Lu I-Feng Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, Taiwan aut NATIONALLICENCE 700 1- Chiu I-Chung Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, Taiwan aut NATIONALLICENCE 700 1- Chen Po-Yuan Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, Taiwan aut NATIONALLICENCE 700 1- Huang Bo-Wei Graduate Institute of Applied Mechanics, National Taiwan University, Taipei, Taiwan aut NATIONALLICENCE 700 1- Cheng I-Chun Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, Taiwan aut NATIONALLICENCE 700 1- Chen Jian-Zhang Graduate Institute of Applied Mechanics, National Taiwan University, Taipei, Taiwan aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/6(2013-06-01), 1242-1245 0361-5235 42:6<1242 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer