naa a22 4500 510800815 CHVBK 20180411083354.0 cr unu---uuuuu 180411e20130601xx s 000 0 eng 10.1007/s11664-013-2496-0 doi (NATIONALLICENCE)springer-10.1007/s11664-013-2496-0 Effect of Se Substitution on Structural and Electrical Transport Properties of Bi0.4Sb1.6Se3 x Te3(1− x ) Hexagonal Rods [Elektronische Daten] [Arej Kadhim, Arshad Hmood, Haslan Abu Hassan] In the current study, novel hexagonal rods based on Bi0.4Sb1.6Te3 ingots dispersed with x amount of Se (x=0.0, 0.2, 0.4, 0.6, 0.8, and 1.0) in the form Bi0.4Sb1.6Se3x Te3(1−x) were synthesized via a standard solid-state microwave route. The morphologies of these rods were explored using field-emission scanning electron microscopy (FESEM). The crystal structure of the powders was examined by x-ray diffraction (XRD) analysis, which showed that powders of the 0.0≤x≤0.8 samples could be indexed to the rhombohedral phase, whereas the sample with x=1.0 had an orthorhombic phase structure. The influence of variations in the Se content on the thermoelectric properties was studied in the temperature range from 300K to 523K. Alloying of Se into Bi0.4Sb1.6Te3 effectively caused a decrease in the hole concentration and, thus, a decrease in the electrical conductivity and an increase in the Seebeck coefficient. The maximal power factor measured in the present work was 7.47mW/mK2 at 373K for the x=0.8 sample. TMS, 2013 Quaternary alloy systems nationallicence thermoelectric properties nationallicence solid-state microwave synthesis nationallicence x-ray diffraction nationallicence Kadhim Arej School of Physics, Universiti Sains Malaysia, 11800, Pulau Penang, Malaysia aut Hmood Arshad School of Physics, Universiti Sains Malaysia, 11800, Pulau Penang, Malaysia aut Abu Hassan Haslan School of Physics, Universiti Sains Malaysia, 11800, Pulau Penang, Malaysia aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/6(2013-06-01), 1017-1023 0361-5235 42:6<1017 2013 42 11664 https://doi.org/10.1007/s11664-013-2496-0 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2496-0 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Kadhim Arej School of Physics, Universiti Sains Malaysia, 11800, Pulau Penang, Malaysia aut NATIONALLICENCE 700 1- Hmood Arshad School of Physics, Universiti Sains Malaysia, 11800, Pulau Penang, Malaysia aut NATIONALLICENCE 700 1- Abu Hassan Haslan School of Physics, Universiti Sains Malaysia, 11800, Pulau Penang, Malaysia aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/6(2013-06-01), 1017-1023 0361-5235 42:6<1017 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer