naa a22 4500 510800823 CHVBK 20180411083354.0 cr unu---uuuuu 180411e20130601xx s 000 0 eng 10.1007/s11664-013-2489-z doi (NATIONALLICENCE)springer-10.1007/s11664-013-2489-z Comparison of Microwave Dielectric Properties of Ba0.6Sr0.4TiO3 Thin Films Grown on (100) LaAlO3 and (100) MgO Single-Crystal Substrates [Elektronische Daten] [Hui Wang, Yanlong Bian, Bo Shen, Jiwei Zhai] The microwave properties of barium strontium titanate (Ba0.6Sr0.4TiO3) thin films grown on (100) LaAlO3 (LAO) and (100) MgO single-crystal substrates through the sol-gel technique were investigated. The interdigital capacitor (IDC) technique was used to measure the nonlinear dielectric properties in the frequency range from 1GHz to 10GHz. The results show that the Curie temperature, capacitance, and tunability of the films are strongly dependent upon the substrate. The film fabricated on the LaAlO3 substrate has a higher tunability of 16.77% than that grown on the MgO substrate (∼8.38%), measured at 10GHz with an applied voltage of 35V. The loss tangent is a linear function of the frequency in the microwave range, and the film grown on the MgO substrate has a lower loss tangent than that grown on the LAO substrate. This work reveals the great potential of Ba0.6Sr0.4TiO3 (BST) films for application in tunable microwave devices. TMS, 2013 Thin film nationallicence orientation nationallicence dielectric properties nationallicence Wang Hui Functional Materials Research Laboratory, Tongji University, Siping Road No. 1239, 200092, Shanghai, China aut Bian Yanlong Functional Materials Research Laboratory, Tongji University, Siping Road No. 1239, 200092, Shanghai, China aut Shen Bo Functional Materials Research Laboratory, Tongji University, Siping Road No. 1239, 200092, Shanghai, China aut Zhai Jiwei Functional Materials Research Laboratory, Tongji University, Siping Road No. 1239, 200092, Shanghai, China aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/6(2013-06-01), 988-992 0361-5235 42:6<988 2013 42 11664 https://doi.org/10.1007/s11664-013-2489-z text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2489-z text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Wang Hui Functional Materials Research Laboratory, Tongji University, Siping Road No. 1239, 200092, Shanghai, China aut NATIONALLICENCE 700 1- Bian Yanlong Functional Materials Research Laboratory, Tongji University, Siping Road No. 1239, 200092, Shanghai, China aut NATIONALLICENCE 700 1- Shen Bo Functional Materials Research Laboratory, Tongji University, Siping Road No. 1239, 200092, Shanghai, China aut NATIONALLICENCE 700 1- Zhai Jiwei Functional Materials Research Laboratory, Tongji University, Siping Road No. 1239, 200092, Shanghai, China aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/6(2013-06-01), 988-992 0361-5235 42:6<988 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer