naa a22 4500 510800858 CHVBK 20180411083354.0 cr unu---uuuuu 180411e20130601xx s 000 0 eng 10.1007/s11664-013-2577-0 doi (NATIONALLICENCE)springer-10.1007/s11664-013-2577-0 Thermoelectric Properties of Bi2Te2Se Compensated by Native Defects and Sn Doping [Elektronische Daten] [M.K. Fuccillo, Shuang Jia, M.E. Charles, R.J. Cava] In Bi2Te2Se the defect chemistry involves native defects that compete such that they can either exchange dominance or else significantly compensate each other. Here we show how the net carrier concentration, n−p, which depends on the relative amounts of these defects and is readily obtained from Hall data, can be used as a fundamental materials parameter to describe the varied behavior of the thermoelectric properties as a function of compensation. We report the effects of tuning this parameter over multiple orders of magnitude by hole-doping the n-type material Bi2Te2Se0.995, which is already significantly compensated because of its Se deficiency. Crystals with different levels of hole doping were achieved by two separate approaches, namely by selecting pieces from different locations in an undoped crystal in which a systematic carrier concentration gradient had been induced by its growth conditions, and alternatively by doping with Sn for Bi. The thermoelectric power factors for Bi2−x Sn x Te2Se0.995 for x=0, 0.002, 0.005, 0.010, and 0.040 are reported, and the dependence of the transport properties on the extent of compensation is discussed. TMS, 2013 Thermoelectrics nationallicence defect chemistry nationallicence bismuth telluride selenide nationallicence doping nationallicence Fuccillo M.K. Department of Chemistry, Princeton University, 08544, Princeton, NJ, USA aut Jia Shuang Department of Chemistry, Princeton University, 08544, Princeton, NJ, USA aut Charles M.E. Department of Chemistry, Princeton University, 08544, Princeton, NJ, USA aut Cava R.J. Department of Chemistry, Princeton University, 08544, Princeton, NJ, USA aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/6(2013-06-01), 1246-1253 0361-5235 42:6<1246 2013 42 11664 https://doi.org/10.1007/s11664-013-2577-0 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2577-0 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Fuccillo M.K. Department of Chemistry, Princeton University, 08544, Princeton, NJ, USA aut NATIONALLICENCE 700 1- Jia Shuang Department of Chemistry, Princeton University, 08544, Princeton, NJ, USA aut NATIONALLICENCE 700 1- Charles M.E. Department of Chemistry, Princeton University, 08544, Princeton, NJ, USA aut NATIONALLICENCE 700 1- Cava R.J. Department of Chemistry, Princeton University, 08544, Princeton, NJ, USA aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/6(2013-06-01), 1246-1253 0361-5235 42:6<1246 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer