naa a22 4500 510800874 CHVBK 20180411083354.0 cr unu---uuuuu 180411e20130601xx s 000 0 eng 10.1007/s11664-013-2543-x doi (NATIONALLICENCE)springer-10.1007/s11664-013-2543-x MnO2-Modified Ba(Ti,Zr)O3 Ceramics with High Q m and Good Thermal Stability [Elektronische Daten] [P. Zheng, J. Zhang, H. Qin, K. Song, J. Wu, Z. Ying, L. Zheng, J. Deng] MnO2-modified Ba(Ti0.9625Zr0.0375)O3 ceramics have been prepared by the conventional solid-state reaction technique at different sintering temperatures. Room-temperature piezoelectric properties, thermal stability, and crystalline structures were investigated. It was found that both the MnO2 additive and sintering temperature significantly influence the piezoelectric properties of the MnO2-modified Ba(Ti0.9625Zr0.0375)O3 ceramics. The sample sintered at 1400°C exhibited the best room-temperature piezoelectric properties of Q m=1907, d 33=205pC/N, and k p=40.5% with tanδ=0.46%, and its k p remains larger than 35% in the broad temperature range from −38°C to 65°C. The results indicate that MnO2-modified Ba(Ti0.9625Zr0.0375)O3 ceramics are promising lead-free materials for frequency device and power device applications. TMS, 2013 Ceramics nationallicence lead free nationallicence piezoelectric properties nationallicence high Q m nationallicence thermal stability nationallicence Zheng P. College of Electronics and Information, Hangzhou Dianzi University, 310018, Hangzhou, China aut Zhang J. School of Physics, Shandong University, 250100, Jinan, China aut Qin H. College of Electronics and Information, Hangzhou Dianzi University, 310018, Hangzhou, China aut Song K. College of Electronics and Information, Hangzhou Dianzi University, 310018, Hangzhou, China aut Wu J. College of Electronics and Information, Hangzhou Dianzi University, 310018, Hangzhou, China aut Ying Z. College of Electronics and Information, Hangzhou Dianzi University, 310018, Hangzhou, China aut Zheng L. College of Electronics and Information, Hangzhou Dianzi University, 310018, Hangzhou, China aut Deng J. College of Electronics and Information, Hangzhou Dianzi University, 310018, Hangzhou, China aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/6(2013-06-01), 1154-1157 0361-5235 42:6<1154 2013 42 11664 https://doi.org/10.1007/s11664-013-2543-x text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2543-x text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Zheng P. College of Electronics and Information, Hangzhou Dianzi University, 310018, Hangzhou, China aut NATIONALLICENCE 700 1- Zhang J. School of Physics, Shandong University, 250100, Jinan, China aut NATIONALLICENCE 700 1- Qin H. College of Electronics and Information, Hangzhou Dianzi University, 310018, Hangzhou, China aut NATIONALLICENCE 700 1- Song K. College of Electronics and Information, Hangzhou Dianzi University, 310018, Hangzhou, China aut NATIONALLICENCE 700 1- Wu J. College of Electronics and Information, Hangzhou Dianzi University, 310018, Hangzhou, China aut NATIONALLICENCE 700 1- Ying Z. College of Electronics and Information, Hangzhou Dianzi University, 310018, Hangzhou, China aut NATIONALLICENCE 700 1- Zheng L. College of Electronics and Information, Hangzhou Dianzi University, 310018, Hangzhou, China aut NATIONALLICENCE 700 1- Deng J. College of Electronics and Information, Hangzhou Dianzi University, 310018, Hangzhou, China aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/6(2013-06-01), 1154-1157 0361-5235 42:6<1154 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer