naa a22 4500 510800947 CHVBK 20180411083355.0 cr unu---uuuuu 180411e20130601xx s 000 0 eng 10.1007/s11664-013-2538-7 doi (NATIONALLICENCE)springer-10.1007/s11664-013-2538-7 Comparative Studies of the Growth and Characterization of Germanium Epitaxial Film on Silicon (001) with 0° and 6° Offcut [Elektronische Daten] [Kwang Lee, Yew Tan, Adam Jandl, Eugene Fitzgerald, Chuan Tan] The quality of germanium (Ge) epitaxial films grown directly on silicon (Si) (001) with 0° and 6° offcut orientation using a reduced-pressure chemical vapor deposition system is studied and compared. Ge film grown on Si (001) with 6° offcut presents ∼65% higher threading dislocation density and higher root-mean-square (RMS) surface roughness (1.92nm versus 0.98nm) than Ge film grown on Si (001) with 0° offcut. Plan-view transmission electron microscopy also reveals that threading dislocations are more severe (in terms of contrast and density) for the 6° offcut. In addition, both high-resolution x-ray diffraction and Raman spectroscopy analyses show that the Ge epilayer on 6° offcut wafer presents higher tensile strain. The poorer quality of the Ge film on Si (001) with 6° offcut is a result of an imbalance in Burgers vectors that favors dislocation nucleation over annihilation. TMS, 2013 Germanium nationallicence offcut nationallicence heteroepitaxy nationallicence reduced-pressure chemical vapor deposition nationallicence Lee Kwang Singapore-MIT Alliance for Research and Technology (SMART), 1 CREATE Way, #10-01 CREATE Tower, 138602, Singapore, Singapore aut Tan Yew School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798, Singapore, Singapore aut Jandl Adam Department of Materials Science and Engineering, Massachusetts Institute of Technology, 02139, Cambridge, MA, USA aut Fitzgerald Eugene Singapore-MIT Alliance for Research and Technology (SMART), 1 CREATE Way, #10-01 CREATE Tower, 138602, Singapore, Singapore aut Tan Chuan Singapore-MIT Alliance for Research and Technology (SMART), 1 CREATE Way, #10-01 CREATE Tower, 138602, Singapore, Singapore aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/6(2013-06-01), 1133-1139 0361-5235 42:6<1133 2013 42 11664 https://doi.org/10.1007/s11664-013-2538-7 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2538-7 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Lee Kwang Singapore-MIT Alliance for Research and Technology (SMART), 1 CREATE Way, #10-01 CREATE Tower, 138602, Singapore, Singapore aut NATIONALLICENCE 700 1- Tan Yew School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798, Singapore, Singapore aut NATIONALLICENCE 700 1- Jandl Adam Department of Materials Science and Engineering, Massachusetts Institute of Technology, 02139, Cambridge, MA, USA aut NATIONALLICENCE 700 1- Fitzgerald Eugene Singapore-MIT Alliance for Research and Technology (SMART), 1 CREATE Way, #10-01 CREATE Tower, 138602, Singapore, Singapore aut NATIONALLICENCE 700 1- Tan Chuan Singapore-MIT Alliance for Research and Technology (SMART), 1 CREATE Way, #10-01 CREATE Tower, 138602, Singapore, Singapore aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/6(2013-06-01), 1133-1139 0361-5235 42:6<1133 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer