naa a22 4500 510800963 CHVBK 20180411083355.0 cr unu---uuuuu 180411e20130601xx s 000 0 eng 10.1007/s11664-013-2474-6 doi (NATIONALLICENCE)springer-10.1007/s11664-013-2474-6 Zhou Peng Department of Astronautical Science and Mechanics, Harbin Institute of Technology, 150001, Harbin, Heilongjiang, People's Republic of China aut The Stressing Effect of Electromigration from the Maxwell Stress and a Preliminary Mean-Time-to-Failure Analysis [Elektronische Daten] [Peng Zhou] As temperature increases, it is suggested that atoms on lattice sites serve as dynamic defects and cause a much more homogeneous distribution of the Maxwell stress throughout the crystal lattice compared with that caused by static defects. Though this stressing effect mostly leads to Joule heating, it also results in distortion of the crystal lattice, which leads to a decrease in the activation energy for atomic diffusion and causes enhancements in the phase growth rates at both interfaces of diffusion couples. Due to this stressing effect, the decrease in the activation energy is proportional to a square term of the current density J. A mean-time-to-failure analysis is performed for failure caused by excessive growth of intermediate phases, and a mean-time-to-failure (MTTF) equation is found. This equation appears similar to Black's equation but with an extra exponential term arising from the stressing effect of the crystal lattice. TMS, 2013 Electromigration nationallicence stressing effect nationallicence Black's equation nationallicence Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/6(2013-06-01), 956-962 0361-5235 42:6<956 2013 42 11664 https://doi.org/10.1007/s11664-013-2474-6 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2474-6 text/html Onlinezugriff via DOI NATIONALLICENCE 100 1- Zhou Peng Department of Astronautical Science and Mechanics, Harbin Institute of Technology, 150001, Harbin, Heilongjiang, People's Republic of China aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/6(2013-06-01), 956-962 0361-5235 42:6<956 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer