naa a22 4500 510800971 CHVBK 20180411083355.0 cr unu---uuuuu 180411e20130601xx s 000 0 eng 10.1007/s11664-013-2556-5 doi (NATIONALLICENCE)springer-10.1007/s11664-013-2556-5 Investigation of the Properties of Ba-Substituted La0.7Sr0.3− x Ba x MnO3 Perovskite Manganite Films for Resistive Switching Applications [Elektronische Daten] [Sun Choi, Hong-Sub Lee, Geun Yeom, Hyung-Ho Park] La0.7Sr0.3−x Ba x MnO3 (LSBMO: x=0.09, 0.18, and 0.27) thin films were prepared on Pt-coated Si substrates using a radiofrequency magnetron sputtering technique at a substrate heating temperature of 450°C. The effects of varying the amount of substituted Ba2+ on the physical, chemical, and electrical properties of the perovskite manganite films were systematically investigated. X-Ray diffraction showed that the growth orientation and crystallinity of films were not affected by the amount of substituted Ba cations. Raman spectroscopy was used to determine the tilt of MnO6 octahedra and the Jahn-Teller-type distortion variation of the manganite films. The change in covalent characteristics of Mn-O bonds with increasing amounts of Ba2+ substituent was analyzed by x-ray photoelectron spectroscopy, specifically to examine the effects of bond characteristics on the resistive switching properties of LSBMO. The resistance of the LSBMO films increased with increasing Ba2+ content due to an increase in the covalent nature of Mn-O bonds. The resistive switching ratio increased with increasing Ba2+ amount, and relationships among resistive switching, Jahn-Teller distortion, and Mn-O bond character of LSBMO films were interpreted. TMS, 2013 La0.7Sr0.3− x Ba x MnO3 nationallicence Jahn-Teller distortion nationallicence XPS nationallicence Raman nationallicence resistive switching nationallicence Choi Sun Department of Materials Science and Engineering, Yonsei University, 120-749, Seoul, Korea aut Lee Hong-Sub Department of Materials Science and Engineering, Yonsei University, 120-749, Seoul, Korea aut Yeom Geun Department of Materials Science and Engineering, Sungkyunkwan University, 440-746, Suwon, Kyunggi-do, Korea aut Park Hyung-Ho Department of Materials Science and Engineering, Yonsei University, 120-749, Seoul, Korea aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/6(2013-06-01), 1196-1201 0361-5235 42:6<1196 2013 42 11664 https://doi.org/10.1007/s11664-013-2556-5 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2556-5 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Choi Sun Department of Materials Science and Engineering, Yonsei University, 120-749, Seoul, Korea aut NATIONALLICENCE 700 1- Lee Hong-Sub Department of Materials Science and Engineering, Yonsei University, 120-749, Seoul, Korea aut NATIONALLICENCE 700 1- Yeom Geun Department of Materials Science and Engineering, Sungkyunkwan University, 440-746, Suwon, Kyunggi-do, Korea aut NATIONALLICENCE 700 1- Park Hyung-Ho Department of Materials Science and Engineering, Yonsei University, 120-749, Seoul, Korea aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/6(2013-06-01), 1196-1201 0361-5235 42:6<1196 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer