naa a22 4500 510800998 CHVBK 20180411083355.0 cr unu---uuuuu 180411e20130601xx s 000 0 eng 10.1007/s11664-013-2502-6 doi (NATIONALLICENCE)springer-10.1007/s11664-013-2502-6 Qasrawi A.F. Department of Physics, Arab-American University, Jenin, West Bank, Palestine aut Illumination Effects on the Capacitance Spectra and Signal Quality Factor of Al/InSe/C Microwave Sensors [Elektronische Daten] [A.F. Qasrawi] Amorphous indium selenide thin films have been used in the design of a microwave-sensitive Schottky barrier. The illumination effects on the capacitance spectra, on the signal quality factor, and on the capacitance (C)-voltage (V) characteristics of the Al/InSe/C device are investigated. Particular shifts in the amplitude and in the resonance peaks of the capacitance spectra which were studied in the frequency range of 10.0kHz to 3.0GHz are observed. While the photoexcitation of these devices increased the capacity level by ∼1.6 times the original magnitude, the dark quality factor, which was 2.2×106 at 3.0GHz, fell to 1.2×106 when subjected to luminance of 14.7klux. Analysis of the C-V curves recorded at signal power ranging from wireless local area network (LAN) levels to the maximum output power of third generation (3G) mobiles reflected high tunability of capacitance upon increasing the voltage or power. The tunability of the biased capacitance was much more pronounced in the light than in the dark. The obtained characteristics of the Al/InSe/C sensors indicate their usability in radio and microwave technology. TMS, 2013 Semiconductor devices nationallicence InSe nationallicence thin films nationallicence optical nationallicence Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/6(2013-06-01), 1033-1036 0361-5235 42:6<1033 2013 42 11664 https://doi.org/10.1007/s11664-013-2502-6 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2502-6 text/html Onlinezugriff via DOI NATIONALLICENCE 100 1- Qasrawi A.F. Department of Physics, Arab-American University, Jenin, West Bank, Palestine aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/6(2013-06-01), 1033-1036 0361-5235 42:6<1033 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer