naa a22 4500 510801056 CHVBK 20180411083355.0 cr unu---uuuuu 180411e20130601xx s 000 0 eng 10.1007/s11664-013-2592-1 doi (NATIONALLICENCE)springer-10.1007/s11664-013-2592-1 Influence of Annealing on Electrical Properties of an Organic Thin Layer-Based n -Type InP Schottky Barrier Diode [Elektronische Daten] [V. Rajagopal Reddy, A. Umapathi, S. Sankar Naik] The electrical properties of a fabricated Au/polymethylmethacrylate (PMMA)/n-InP Schottky barrier diode have been analyzed for different annealing temperatures using current-voltage (I-V) and capacitance-voltage (C-V) techniques. It is observed that the Au/PMMA/n-InP structure shows excellent rectifying behavior. The extracted barrier height and ideality factor of the as-deposited Au/PMMA/n-InP Schottky contact are 0.68eV (J-V)/0.82eV (C-V) and 1.57, respectively. However, the barrier height (BH) of the Au/PMMA/n-InP Schottky contact increases to 0.78eV (J-V)/0.99eV (C-V) when the contact is annealed at 150°C for 1min in nitrogen atmosphere. Upon annealing at 200°C, the BH value decreases to 0.72eV (J-V)/0.90eV (C-V) and the ideality factor increases to 1.48. The PMMA layer increases the effective barrier height of the structure by creating a physical barrier between the Au metal and the n-InP. Cheung's functions are also used to calculate the series resistance of the Au/PMMA/n-InP structure. The interface state density (N ss) is found to be 6.380×1012cm−2eV−1 and 1.916×1012cm−2eV−1 for the as-deposited and 150°C-annealed Au/PMMA/n-InP Schottky contacts, respectively. These results indicate that the interface state density and series resistance have a significant effect on the electrical characteristics of Au/PMMA/n-InP Schottky barrier devices. Finally, it is noted that the diode parameters change with increasing annealing temperature. TMS, 2013 Electrical properties nationallicence Au/PMMA/ n -InP Schottky diode nationallicence series resistance nationallicence interface state density nationallicence Rajagopal Reddy V. Department of Physics, Sri Venkateswara University, 517502, Tirupati, India aut Umapathi A. Department of Physics, Sri Venkateswara University, 517502, Tirupati, India aut Sankar Naik S. Department of Physics, Sri Venkateswara University, 517502, Tirupati, India aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/6(2013-06-01), 1282-1289 0361-5235 42:6<1282 2013 42 11664 https://doi.org/10.1007/s11664-013-2592-1 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2592-1 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Rajagopal Reddy V. Department of Physics, Sri Venkateswara University, 517502, Tirupati, India aut NATIONALLICENCE 700 1- Umapathi A. Department of Physics, Sri Venkateswara University, 517502, Tirupati, India aut NATIONALLICENCE 700 1- Sankar Naik S. Department of Physics, Sri Venkateswara University, 517502, Tirupati, India aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/6(2013-06-01), 1282-1289 0361-5235 42:6<1282 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer