naa a22 4500 510801064 CHVBK 20180411083355.0 cr unu---uuuuu 180411e20130601xx s 000 0 eng 10.1007/s11664-012-2463-1 doi (NATIONALLICENCE)springer-10.1007/s11664-012-2463-1 Analysis of SiC Deposition Rate in a Tubular Hot-Wall Reactor with Polymeric Source Using the DoE Method [Elektronische Daten] [A. Jamali Keikha, T. Fanaei Sheikholeslami, A. Behzadmehr] Atmospheric-pressure chemical vapor deposition of silicon carbide in a tubular hot-wall reactor using a polymeric source was studied. A three-dimensional model of the reactor was solved numerically based on the finite-volume method. To achieve the best desired conditions, the effects of substrate temperature, mass fraction of polycarbosilane (-Si[CH3]2-), inlet velocity, and substrate location on the SiC deposition rate were considered. These effects were investigated to obtain the optimum conditions by using the design of experiments (DoE) method. Finally, several contours are presented to help designers find suitable reactor conditions for higher performance. TMS, 2013 CVD nationallicence SiC nationallicence numerical study nationallicence DoE nationallicence optimization nationallicence Jamali Keikha A. Mechanical Engineering Department, University of Sistan and Baluchestan, 98164-161, Zahedan, Iran aut Fanaei Sheikholeslami T. Faculty of Electric and Computer Engineering, University of Sistan and Baluchestan, 98164-161, Zahedan, Iran aut Behzadmehr A. Mechanical Engineering Department, University of Sistan and Baluchestan, 98164-161, Zahedan, Iran aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/6(2013-06-01), 931-938 0361-5235 42:6<931 2013 42 11664 https://doi.org/10.1007/s11664-012-2463-1 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-012-2463-1 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Jamali Keikha A. Mechanical Engineering Department, University of Sistan and Baluchestan, 98164-161, Zahedan, Iran aut NATIONALLICENCE 700 1- Fanaei Sheikholeslami T. Faculty of Electric and Computer Engineering, University of Sistan and Baluchestan, 98164-161, Zahedan, Iran aut NATIONALLICENCE 700 1- Behzadmehr A. Mechanical Engineering Department, University of Sistan and Baluchestan, 98164-161, Zahedan, Iran aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/6(2013-06-01), 931-938 0361-5235 42:6<931 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer