naa a22 4500 510801110 CHVBK 20180411083355.0 cr unu---uuuuu 180411e20130601xx s 000 0 eng 10.1007/s11664-013-2519-x doi (NATIONALLICENCE)springer-10.1007/s11664-013-2519-x Selective CdTe Nanoheteroepitaxial Growth on Si(100) Substrates Using the Close-Spaced Sublimation Technique Without the Use of a Mask [Elektronische Daten] [A. Diaz, S. Quinones, D. Ferrer] The development of HgCdTe detectors requires high sensitivity, small pixel size, low defect density, long-term thermal-cycling reliability, and large-area substrates. CdTe bulk substrates were initially used for epitaxial growth of HgCdTe films. However, CdTe has a lattice mismatch with long-wavelength infrared (LWIR) and middle-wavelength infrared (MWIR) HgCdTe that results in detrimental dislocation densities above mid-106cm−2. This work explores the use of CdTe/Si as a possible substrate for HgCdTe detectors. Although there is a 19% lattice mismatch between CdTe and Si, the nanoheteroepitaxy (NHE) technique makes it possible to grow CdTe on Si substrates with fewer defects at the CdTe/Si interface. In this work, Si(100) was patterned using photolithography and dry etching to create 500-nm to 1-μm pillars. CdTe was selectively deposited on the pillar surfaces using the close-spaced sublimation (CSS) technique. Scanning electron microscopy (SEM) was used to characterize the CdTe selective growth and grain morphology, and transmission electron microscopy (TEM) was used to analyze the structure and quality of the grains. CdTe selectivity was achieved for most of the substrate and source temperatures used in this study. The ability to selectively deposit CdTe on patterned Si(100) substrates without the use of a mask or seed layer has not been observed before using the CSS technique. The results from this study confirm that CSS has the potential to be an effective and low-cost technique for selective nanoheteroepitaxial growth of CdTe films on Si(100) substrates for infrared detector applications. TMS, 2013 Selective growth nationallicence CdTe nationallicence infrared detectors nationallicence CSS nationallicence SEM nationallicence FIB nationallicence TEM nationallicence Diaz A. Department of Electrical and Computer Engineering, The University of Texas at El Paso, 79968, El Paso, TX, USA aut Quinones S. Department of Electrical and Computer Engineering, The University of Texas at El Paso, 79968, El Paso, TX, USA aut Ferrer D. MRC, The University of Texas at Austin, 78758, Austin, TX, USA aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/6(2013-06-01), 1092-1100 0361-5235 42:6<1092 2013 42 11664 https://doi.org/10.1007/s11664-013-2519-x text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2519-x text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Diaz A. Department of Electrical and Computer Engineering, The University of Texas at El Paso, 79968, El Paso, TX, USA aut NATIONALLICENCE 700 1- Quinones S. Department of Electrical and Computer Engineering, The University of Texas at El Paso, 79968, El Paso, TX, USA aut NATIONALLICENCE 700 1- Ferrer D. MRC, The University of Texas at Austin, 78758, Austin, TX, USA aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/6(2013-06-01), 1092-1100 0361-5235 42:6<1092 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer