naa a22 4500 510801161 CHVBK 20180411083356.0 cr unu---uuuuu 180411e20130601xx s 000 0 eng 10.1007/s11664-013-2560-9 doi (NATIONALLICENCE)springer-10.1007/s11664-013-2560-9 Resistive Switching in a Printed Nanolayer of Poly(4-vinylphenol) [Elektronische Daten] [Muhammad Awais, Kyung Choi] Resistive switching in organic resistive switches fabricated with a sandwich structure of indium tin oxide (ITO)-coated polyethylene terephthalate (PET)/poly(4-vinylphenol) (PVP)/silver (Ag) is reported. A single layer of PVP was used as an active layer in the sandwich structure between the two electrodes. The active layer of the polymer was atomized with the electrohydrodynamic atomization technique on the ITO-coated PET. The film thickness of the PVP polymeric layer on the ITO-coated PET was measured to be 110nm. The surface morphology was characterized by field-emission scanning electron microscopy, and the purity of the film was examined by x-ray photoelectron spectroscopy analysis. Electrical current-voltage (I-V) measurements confirmed the memristive behavior of the sandwich device. The effect of the current compliance (CC) on resistive switching in the fabricated sandwich structure was also explored. The PVP-based organic resistive switch showed a CC-dependent OFF/ON ratio and memory window. Resistive switching memory effects were prominent at low CC up to nanoamps. The as-fabricated device was operated with low operational voltages for both polarities with OFF/ON ratio greater than 100:1. The robustness of the fabricated memristor was checked with multiple voltage sweeps, and the retention time is reported to be over 100min. TMS, 2013 Bipolar switching nationallicence electrohydrodynamic atomization nationallicence electroforming process nationallicence organic memristor nationallicence resistive switch nationallicence Awais Muhammad Department of Mechatronics Engineering, Jeju National University, 690-756, Jeju-Si, Jeju, Republic of Korea aut Choi Kyung Department of Mechatronics Engineering, Jeju National University, 690-756, Jeju-Si, Jeju, Republic of Korea aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/6(2013-06-01), 1202-1208 0361-5235 42:6<1202 2013 42 11664 https://doi.org/10.1007/s11664-013-2560-9 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2560-9 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Awais Muhammad Department of Mechatronics Engineering, Jeju National University, 690-756, Jeju-Si, Jeju, Republic of Korea aut NATIONALLICENCE 700 1- Choi Kyung Department of Mechatronics Engineering, Jeju National University, 690-756, Jeju-Si, Jeju, Republic of Korea aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/6(2013-06-01), 1202-1208 0361-5235 42:6<1202 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer