naa a22 4500 510801250 CHVBK 20180411083356.0 cr unu---uuuuu 180411e20130901xx s 000 0 eng 10.1007/s11664-013-2668-y doi (NATIONALLICENCE)springer-10.1007/s11664-013-2668-y Relaxation Dynamics and Threading Dislocations in ZnSeand ZnS y Se1− y /GaAs (001) Heterostructures [Elektronische Daten] [T. Kujofsa, S. Cheruku, W. Yu, B. Outlaw, S. Xhurxhi, F. Obst, D. Sidoti, B. Bertoli, P. Rago, E. Suarez, F. Jain, J. Ayers] The design of lattice-mismatched semiconductor devices requires a predictive model for strains and threading dislocation densities. Previous work enabled modeling of uniform layers but not the threading dislocations in device structures with arbitrary compositional grading. In this work we present a kinetic model for lattice relaxation which includes misfit-threading dislocation interactions, which have not been considered in previous annihilation-coalescence models. Inclusion of these dislocation interactions makes the kinetic model applicable to compositionally graded structures, and we have applied it to ZnSe/GaAs (001) and ZnS y Se1−y /GaAs (001) heterostructures. The results of the kinetic model are consistent with the observed threading dislocation behavior in ZnSe/GaAs (001) uniform layers, and for graded ZnS y Se1−y /GaAs (001) heterostructures the kinetic model predicts that the threading dislocation density may be reduced by the inclusion of grading buffer layers employing compositional overshoot. This "dislocation compensation” effect is consistent with our high-resolution x-ray diffraction experimental results for graded ZnS y Se1−y /GaAs (001) structures grown by photoassisted metalorganic vapor-phase epitaxy. TMS, 2013 Plastic flow nationallicence relaxation dynamics nationallicence threading dislocation nationallicence dislocation compensation nationallicence graded layers nationallicence metamorphic devices nationallicence Kujofsa T. Department of Electrical and Computer Engineering, University of Connecticut, 371 Fairfield Way, Unit 4157, 06269-4157, Storrs, CT, USA aut Cheruku S. Department of Electrical and Computer Engineering, University of Connecticut, 371 Fairfield Way, Unit 4157, 06269-4157, Storrs, CT, USA aut Yu W. Department of Electrical and Computer Engineering, University of Connecticut, 371 Fairfield Way, Unit 4157, 06269-4157, Storrs, CT, USA aut Outlaw B. Department of Electrical and Computer Engineering, University of Connecticut, 371 Fairfield Way, Unit 4157, 06269-4157, Storrs, CT, USA aut Xhurxhi S. Department of Electrical and Computer Engineering, University of Connecticut, 371 Fairfield Way, Unit 4157, 06269-4157, Storrs, CT, USA aut Obst F. Department of Electrical and Computer Engineering, University of Connecticut, 371 Fairfield Way, Unit 4157, 06269-4157, Storrs, CT, USA aut Sidoti D. Department of Electrical and Computer Engineering, University of Connecticut, 371 Fairfield Way, Unit 4157, 06269-4157, Storrs, CT, USA aut Bertoli B. Department of Electrical and Computer Engineering, University of Connecticut, 371 Fairfield Way, Unit 4157, 06269-4157, Storrs, CT, USA aut Rago P. Department of Electrical and Computer Engineering, University of Connecticut, 371 Fairfield Way, Unit 4157, 06269-4157, Storrs, CT, USA aut Suarez E. Department of Electrical and Computer Engineering, University of Connecticut, 371 Fairfield Way, Unit 4157, 06269-4157, Storrs, CT, USA aut Jain F. Department of Electrical and Computer Engineering, University of Connecticut, 371 Fairfield Way, Unit 4157, 06269-4157, Storrs, CT, USA aut Ayers J. Department of Electrical and Computer Engineering, University of Connecticut, 371 Fairfield Way, Unit 4157, 06269-4157, Storrs, CT, USA aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/9(2013-09-01), 2764-2770 0361-5235 42:9<2764 2013 42 11664 https://doi.org/10.1007/s11664-013-2668-y text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2668-y text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Kujofsa T. Department of Electrical and Computer Engineering, University of Connecticut, 371 Fairfield Way, Unit 4157, 06269-4157, Storrs, CT, USA aut NATIONALLICENCE 700 1- Cheruku S. Department of Electrical and Computer Engineering, University of Connecticut, 371 Fairfield Way, Unit 4157, 06269-4157, Storrs, CT, USA aut NATIONALLICENCE 700 1- Yu W. Department of Electrical and Computer Engineering, University of Connecticut, 371 Fairfield Way, Unit 4157, 06269-4157, Storrs, CT, USA aut NATIONALLICENCE 700 1- Outlaw B. Department of Electrical and Computer Engineering, University of Connecticut, 371 Fairfield Way, Unit 4157, 06269-4157, Storrs, CT, USA aut NATIONALLICENCE 700 1- Xhurxhi S. Department of Electrical and Computer Engineering, University of Connecticut, 371 Fairfield Way, Unit 4157, 06269-4157, Storrs, CT, USA aut NATIONALLICENCE 700 1- Obst F. Department of Electrical and Computer Engineering, University of Connecticut, 371 Fairfield Way, Unit 4157, 06269-4157, Storrs, CT, USA aut NATIONALLICENCE 700 1- Sidoti D. Department of Electrical and Computer Engineering, University of Connecticut, 371 Fairfield Way, Unit 4157, 06269-4157, Storrs, CT, USA aut NATIONALLICENCE 700 1- Bertoli B. Department of Electrical and Computer Engineering, University of Connecticut, 371 Fairfield Way, Unit 4157, 06269-4157, Storrs, CT, USA aut NATIONALLICENCE 700 1- Rago P. Department of Electrical and Computer Engineering, University of Connecticut, 371 Fairfield Way, Unit 4157, 06269-4157, Storrs, CT, USA aut NATIONALLICENCE 700 1- Suarez E. Department of Electrical and Computer Engineering, University of Connecticut, 371 Fairfield Way, Unit 4157, 06269-4157, Storrs, CT, USA aut NATIONALLICENCE 700 1- Jain F. Department of Electrical and Computer Engineering, University of Connecticut, 371 Fairfield Way, Unit 4157, 06269-4157, Storrs, CT, USA aut NATIONALLICENCE 700 1- Ayers J. Department of Electrical and Computer Engineering, University of Connecticut, 371 Fairfield Way, Unit 4157, 06269-4157, Storrs, CT, USA aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/9(2013-09-01), 2764-2770 0361-5235 42:9<2764 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer