naa a22 4500 510801277 CHVBK 20180411083356.0 cr unu---uuuuu 180411e20130901xx s 000 0 eng 10.1007/s11664-013-2640-x doi (NATIONALLICENCE)springer-10.1007/s11664-013-2640-x Layered Sb2Te3 Nanoflakes as Chalcogenide Dielectrics [Elektronische Daten] [Punita Srivastava, Kedar Singh] Dielectric nanoflakes of Sb2Te3 represent an important advance in science and technology due to their extraordinary properties. Polycrystalline layered Sb2Te3 nanoflakes have been successfully synthesized via a high-throughput chemical route at 60°C. The frequency and temperature dependence of the dielectric constant and dielectric loss of the layered Sb2Te3 nanoflakes have been measured in the frequency range from 30Hz to 758,000Hz and temperature range from 313K to 373K. As-synthesized Sb2Te3 nanoflakes are shown to be promising alternative dielectrics because of their high dielectric constant (ε′≈7.3 to 6022) and low dielectric loss (tanδ≈0.2 to 9.2). These higher values of ε′ and lower values of tanδ of Sb2Te3 nanoflakes confirm that capacitors with capacity (C) of ∼5.2pF to 4336pF may be fabricated for storing renewable energy. Raman spectroscopy confirms that the peak located at ∼142cm−1 corresponds to one in-plane vibrational mode (E g 2 ) of layered Te-Sb-Te-Sb-Te lattice vibration. TMS, 2013 Chalcogenide nanoflakes nationallicence polycrystalline phase nationallicence Raman vibrational mode nationallicence dielectric properties nationallicence capacitor nationallicence Srivastava Punita Faculty of Science, Department of Physics, Banaras Hindu University, 221005, Varanasi, India aut Singh Kedar Faculty of Science, Department of Physics, Banaras Hindu University, 221005, Varanasi, India aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/9(2013-09-01), 2733-2738 0361-5235 42:9<2733 2013 42 11664 https://doi.org/10.1007/s11664-013-2640-x text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2640-x text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Srivastava Punita Faculty of Science, Department of Physics, Banaras Hindu University, 221005, Varanasi, India aut NATIONALLICENCE 700 1- Singh Kedar Faculty of Science, Department of Physics, Banaras Hindu University, 221005, Varanasi, India aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/9(2013-09-01), 2733-2738 0361-5235 42:9<2733 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer