naa a22 4500 510801285 CHVBK 20180411083356.0 cr unu---uuuuu 180411e20130901xx s 000 0 eng 10.1007/s11664-013-2653-5 doi (NATIONALLICENCE)springer-10.1007/s11664-013-2653-5 Ball Impact Reliability of Zn-Sn High-Temperature Solder Joints Bonded with Different Substrates [Elektronische Daten] [Jenn-Ming Song, Meng-Ju Lin, Kun-Hung Hsieh, Tsung-Yun Pai, Yi-Shao Lai, Ying-Ta Chiu] In this study, the high-speed deformation behavior of solder joints formed with Pb-free Zn-Sn and commercial Pb-Sn alloys bonded on different substrates was investigated by the ball impact test method. Overall, Zn-Sn joints exhibited greater impact strength but inferior impact toughness than Pb-Sn joints. This can be ascribed to the high hardness of Zn-Sn solders resulting in partial or overall interfacial fracture. In contrast, the joints with soft Pb-Sn solders all showed a ductile fracture feature. It is suggested that, for the joints revealing brittle fracture, the impact toughness (impact energy) increased with the plastic ability of interfacial intermetallic compounds, while for those showing a ductile fracture mode, the impact energy deteriorated with a hardened solder matrix resulting from substrate dissolution. TMS, 2013 Solder joints nationallicence ball impact test (BIT) nationallicence nanoindentation nationallicence impact toughness nationallicence Song Jenn-Ming Department of Materials Science and Engineering, National Chung Hsing University, 402, Taichung, Taiwan, ROC aut Lin Meng-Ju Department of Materials Science and Engineering, National Dong Hwa University, 974, Hualien, Taiwan, ROC aut Hsieh Kun-Hung Department of Materials Science and Engineering, National Chung Hsing University, 402, Taichung, Taiwan, ROC aut Pai Tsung-Yun Department of Materials Science and Engineering, National Chung Hsing University, 402, Taichung, Taiwan, ROC aut Lai Yi-Shao Central Labs, Advanced Semiconductor Engineering, Inc., 811, Kaohsiung, Taiwan, ROC aut Chiu Ying-Ta Central Labs, Advanced Semiconductor Engineering, Inc., 811, Kaohsiung, Taiwan, ROC aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/9(2013-09-01), 2813-2821 0361-5235 42:9<2813 2013 42 11664 https://doi.org/10.1007/s11664-013-2653-5 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2653-5 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Song Jenn-Ming Department of Materials Science and Engineering, National Chung Hsing University, 402, Taichung, Taiwan, ROC aut NATIONALLICENCE 700 1- Lin Meng-Ju Department of Materials Science and Engineering, National Dong Hwa University, 974, Hualien, Taiwan, ROC aut NATIONALLICENCE 700 1- Hsieh Kun-Hung Department of Materials Science and Engineering, National Chung Hsing University, 402, Taichung, Taiwan, ROC aut NATIONALLICENCE 700 1- Pai Tsung-Yun Department of Materials Science and Engineering, National Chung Hsing University, 402, Taichung, Taiwan, ROC aut NATIONALLICENCE 700 1- Lai Yi-Shao Central Labs, Advanced Semiconductor Engineering, Inc., 811, Kaohsiung, Taiwan, ROC aut NATIONALLICENCE 700 1- Chiu Ying-Ta Central Labs, Advanced Semiconductor Engineering, Inc., 811, Kaohsiung, Taiwan, ROC aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/9(2013-09-01), 2813-2821 0361-5235 42:9<2813 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer