naa a22 4500 510801293 CHVBK 20180411083356.0 cr unu---uuuuu 180411e20130901xx s 000 0 eng 10.1007/s11664-013-2663-3 doi (NATIONALLICENCE)springer-10.1007/s11664-013-2663-3 Pd-Doped Tin-Oxide-Based Thick-Film Sensor Arrayfor Detection of H2, CH4, and CO [Elektronische Daten] [Meenakshi Choudhary, V. Mishra, R. Dwivedi] In the present work, a palladium (Pd)-doped tin oxide (SnO2) thick-film sensor array has been developed by using solid state reaction-derived pure SnO2 powders (starting with two initial tin precursors: SnCl2·2H2O and SnCl4·5H2O). The crystal structure of the powders and the morphology of the thick films have been characterized by using x-ray diffraction and field-emission scanning electron microscopy, respectively. Initially, the sensitivity of all the sensors of the array was studied for hydrogen (H2), methane (CH4), and carbon monoxide gas, followed by detailed analysis of the transient response of a 1wt.% Pd-doped SnO2 sensor prepared by using SnCl4·5H2O as a starting tin precursor, as it possessed better sensitivity for all the test gases. It is found that this sensor exhibits fast response and recovery times (1min and 3.05min) along with good repeatability for test gases; however, for CH4 gas, it shows very much longer response and recovery times. The high response towards H2 gas has been correlated well with the smallest crystallite size (18nm) as well as the porous structure of the thick-film surface. TMS, 2013 Thick film nationallicence sensor array nationallicence tin oxide nationallicence palladium nationallicence Choudhary Meenakshi Centre for Research in Microelectronics (CRME), Department of Electronics Engineering, Indian Institute of Technology (Banaras Hindu University), 221005, Varanasi, Uttar Pradesh, India aut Mishra V. Centre for Research in Microelectronics (CRME), Department of Electronics Engineering, Indian Institute of Technology (Banaras Hindu University), 221005, Varanasi, Uttar Pradesh, India aut Dwivedi R. Centre for Research in Microelectronics (CRME), Department of Electronics Engineering, Indian Institute of Technology (Banaras Hindu University), 221005, Varanasi, Uttar Pradesh, India aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/9(2013-09-01), 2793-2802 0361-5235 42:9<2793 2013 42 11664 https://doi.org/10.1007/s11664-013-2663-3 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2663-3 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Choudhary Meenakshi Centre for Research in Microelectronics (CRME), Department of Electronics Engineering, Indian Institute of Technology (Banaras Hindu University), 221005, Varanasi, Uttar Pradesh, India aut NATIONALLICENCE 700 1- Mishra V. Centre for Research in Microelectronics (CRME), Department of Electronics Engineering, Indian Institute of Technology (Banaras Hindu University), 221005, Varanasi, Uttar Pradesh, India aut NATIONALLICENCE 700 1- Dwivedi R. Centre for Research in Microelectronics (CRME), Department of Electronics Engineering, Indian Institute of Technology (Banaras Hindu University), 221005, Varanasi, Uttar Pradesh, India aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/9(2013-09-01), 2793-2802 0361-5235 42:9<2793 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer