naa a22 4500 510801307 CHVBK 20180411083356.0 cr unu---uuuuu 180411e20130901xx s 000 0 eng 10.1007/s11664-013-2665-1 doi (NATIONALLICENCE)springer-10.1007/s11664-013-2665-1 Cyanate Ester-Based Encapsulation Material for High-Temperature Applications [Elektronische Daten] [Vivek Chidambaram, Eric Rong, Gan Lip, Rhee Daniel] Cyanate ester resin-based composite materials have been proposed as potential encapsulants for high-temperature applications. The objective of this study is to develop a cyanate ester-based encapsulant, which can also serve as a flip-chip underfill as well as for traditional encapsulation. Two different materials, quartz and alumina fillers, have been studied. The impact of shapes and sizes of the fillers on the overall thermomechanical properties has been investigated. The adhesion strengths of the materials to the ceramic substrate, Kovar lid, and silicon die have also been characterized. The modulus of the resin and the shape of the fillers play a pivotal role in minimizing thermal stress, generated by coefficient of thermal expansion mismatches. Smaller filler particles were found to have better adhesion to the cyanate ester resin. The high-temperature performance of the cyanate ester-based encapsulants was evaluated by thermal aging at 300°C for up to 500 h. TMS, 2013 Encapsulant nationallicence underfill nationallicence potting nationallicence resin nationallicence filler nationallicence outgassing nationallicence Chidambaram Vivek Institute of Microelectronics, A*STAR (Agency for Science, Technology and Research), 11 Science Park Road, Science Park II, 117685, Singapore, Singapore aut Rong Eric School of Materials Science and Engineering, Nanyang Technological University, Singapore, Singapore aut Lip Gan School of Materials Science and Engineering, Nanyang Technological University, Singapore, Singapore aut Daniel Rhee Institute of Microelectronics, A*STAR (Agency for Science, Technology and Research), 11 Science Park Road, Science Park II, 117685, Singapore, Singapore aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/9(2013-09-01), 2803-2812 0361-5235 42:9<2803 2013 42 11664 https://doi.org/10.1007/s11664-013-2665-1 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2665-1 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Chidambaram Vivek Institute of Microelectronics, A*STAR (Agency for Science, Technology and Research), 11 Science Park Road, Science Park II, 117685, Singapore, Singapore aut NATIONALLICENCE 700 1- Rong Eric School of Materials Science and Engineering, Nanyang Technological University, Singapore, Singapore aut NATIONALLICENCE 700 1- Lip Gan School of Materials Science and Engineering, Nanyang Technological University, Singapore, Singapore aut NATIONALLICENCE 700 1- Daniel Rhee Institute of Microelectronics, A*STAR (Agency for Science, Technology and Research), 11 Science Park Road, Science Park II, 117685, Singapore, Singapore aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/9(2013-09-01), 2803-2812 0361-5235 42:9<2803 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer