naa a22 4500 510801323 CHVBK 20180411083356.0 cr unu---uuuuu 180411e20130701xx s 000 0 eng 10.1007/s11664-012-2423-9 doi (NATIONALLICENCE)springer-10.1007/s11664-012-2423-9 Influence of Vanadium on the Defect Structureand Thermoelectric Properties of GeTe [Elektronische Daten] [O. Nashchekina, E. Rogacheva, O. Vodorez] The development of new thermoelectric materials based on GeTe is associated with reducing the hole concentration and thermal conductivity. The objects of the present study are GeTe-based solid solutions in the Ge-V-Te ternary system. The goal of the work is to study the character of the change in the structure, mechanical and thermoelectric properties of GeTe under introduction of VTe. The electrical conductivity σ, Seebeck coefficient S, and Hall coefficient R H were measured in the range of 300K to 850K on cast samples and samples prepared by hot pressing; the thermal conductivity λ was measured at room temperature. It was found that the dependences of the unit cell parameters, microhardness, σ, R H, λ, and S on the VTe content exhibit nonmonotonic behavior. The experimental results were interpreted taking into consideration the complex mechanisms of defect formation in the GeTe crystal lattice under introduction of VTe, the existence of nonstoichiometric vacancies, and percolation effects. It was established that introduction of VTe into GeTe leads to a significant decrease in λ and hole concentration p. The maximum room-temperature values of thermoelectric power factor P and thermoelectric figure of merit Z corresponded to ~2mol.% VTe. With increasing temperature up to ~550K, P increases, and the maximum value of P is shifted to ~3mol.% VTe. The values of P and Z obtained for the cast and pressed samples were practically the same. TMS, 2013 GeTe nationallicence solid solutions nationallicence VTe nationallicence defect formation nationallicence thermoelectric properties nationallicence Nashchekina O. National Technical University "Kharkov Polytechnic Institute”, 21 Frunze St, 61002, Kharkov, Ukraine aut Rogacheva E. National Technical University "Kharkov Polytechnic Institute”, 21 Frunze St, 61002, Kharkov, Ukraine aut Vodorez O. National Technical University "Kharkov Polytechnic Institute”, 21 Frunze St, 61002, Kharkov, Ukraine aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/7(2013-07-01), 1771-1775 0361-5235 42:7<1771 2013 42 11664 https://doi.org/10.1007/s11664-012-2423-9 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-012-2423-9 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Nashchekina O. National Technical University "Kharkov Polytechnic Institute”, 21 Frunze St, 61002, Kharkov, Ukraine aut NATIONALLICENCE 700 1- Rogacheva E. National Technical University "Kharkov Polytechnic Institute”, 21 Frunze St, 61002, Kharkov, Ukraine aut NATIONALLICENCE 700 1- Vodorez O. National Technical University "Kharkov Polytechnic Institute”, 21 Frunze St, 61002, Kharkov, Ukraine aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/7(2013-07-01), 1771-1775 0361-5235 42:7<1771 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer