naa a22 4500 51080148X CHVBK 20180411083357.0 cr unu---uuuuu 180411e20130701xx s 000 0 eng 10.1007/s11664-013-2552-9 doi (NATIONALLICENCE)springer-10.1007/s11664-013-2552-9 Temperature Coefficient of Electrical Resistivity in Individual Single-Crystal Bismuth Nanowires [Elektronische Daten] [Masayuki Murata, Fumiaki Tsunemi, Yusuke Saito, Katsuhito Shirota, Keisuke Fujiwara, Yasuhiro Hasegawa, Takashi Komine] The temperature dependence of electrical resistivity and the crystal orientation of single-crystal bismuth nanowires each encapsulated in a quartz template were studied. The electrical resistivities of four bismuth nanowires with diameter of 356nm, 376nm, 622nm, and 633nm were measured in the temperature range from 4.2K to 300K. The temperature coefficient of resistivity of 376-nm- and 633-nm-diameter nanowires was negative in the low-temperature region. On the other hand, a positive temperature coefficient appeared in 356-nm- and 622-nm-diameter nanowires. The positive temperature coefficient was not explained by carrier mean free path limitation. Thus, the crystal orientation of the bismuth nanowires was observed by x-ray diffraction measurements to study the relationship between electrical resistivity and crystal orientation. It was confirmed that the temperature dependence of electrical resistivity strongly depended on the crystal orientation of the bismuth nanowire. TMS, 2013 Bismuth nanowire nationallicence thermoelectric material nationallicence electrical resistivity nationallicence carrier mobility nationallicence crystal orientation nationallicence Murata Masayuki Saitama University, 255 Shimo-Okubo, 338-8570, Sakura, Saitama, Japan aut Tsunemi Fumiaki Saitama University, 255 Shimo-Okubo, 338-8570, Sakura, Saitama, Japan aut Saito Yusuke Saitama University, 255 Shimo-Okubo, 338-8570, Sakura, Saitama, Japan aut Shirota Katsuhito Saitama University, 255 Shimo-Okubo, 338-8570, Sakura, Saitama, Japan aut Fujiwara Keisuke Saitama University, 255 Shimo-Okubo, 338-8570, Sakura, Saitama, Japan aut Hasegawa Yasuhiro Saitama University, 255 Shimo-Okubo, 338-8570, Sakura, Saitama, Japan aut Komine Takashi Ibaraki University, 4-12-1 Nakanarusawa, 316-8511, Hitachi, Ibaraki, Japan aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/7(2013-07-01), 2143-2150 0361-5235 42:7<2143 2013 42 11664 https://doi.org/10.1007/s11664-013-2552-9 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2552-9 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Murata Masayuki Saitama University, 255 Shimo-Okubo, 338-8570, Sakura, Saitama, Japan aut NATIONALLICENCE 700 1- Tsunemi Fumiaki Saitama University, 255 Shimo-Okubo, 338-8570, Sakura, Saitama, Japan aut NATIONALLICENCE 700 1- Saito Yusuke Saitama University, 255 Shimo-Okubo, 338-8570, Sakura, Saitama, Japan aut NATIONALLICENCE 700 1- Shirota Katsuhito Saitama University, 255 Shimo-Okubo, 338-8570, Sakura, Saitama, Japan aut NATIONALLICENCE 700 1- Fujiwara Keisuke Saitama University, 255 Shimo-Okubo, 338-8570, Sakura, Saitama, Japan aut NATIONALLICENCE 700 1- Hasegawa Yasuhiro Saitama University, 255 Shimo-Okubo, 338-8570, Sakura, Saitama, Japan aut NATIONALLICENCE 700 1- Komine Takashi Ibaraki University, 4-12-1 Nakanarusawa, 316-8511, Hitachi, Ibaraki, Japan aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/7(2013-07-01), 2143-2150 0361-5235 42:7<2143 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer