naa a22 4500 510801498 CHVBK 20180411083357.0 cr unu---uuuuu 180411e20130701xx s 000 0 eng 10.1007/s11664-012-2432-8 doi (NATIONALLICENCE)springer-10.1007/s11664-012-2432-8 Parameters of the Constant-Energy Surface and Features of Charge Carrier Scattering of Bi2Te3-Based Epitaxial Films [Elektronische Daten] [L. Lukyanova, Yu. Boikov, V. Danilov, M. Volkov, V. Kutasov] Galvanomagnetic properties of epitaxial Bi0.5Sb1.5Te3 films grown by the hot-wall technique were investigated in magnetic fields of H=5T to 14T through the temperature interval of 10K to 300K. The results were analyzed in terms of a many-valley model of the energy spectrum and anisotropic charge carrier scattering. The degeneracy parameter β d, and ratios of components of the reciprocal effective-mass tensor $$ {\mathord{\scriptscriptstyle\leftrightarrow}\over \alpha} $$ ↔ α and relaxation time tensor $$ {\mathord{\scriptscriptstyle\leftrightarrow}\over \tau } (\varepsilon ) $$ ↔ τ ( ε ) were estimated. Substantial anisotropy of charge carrier scattering was observed in the investigated temperature interval. Anisotropy of charge carrier scattering along bisector axes is enhanced, as compared with that of corresponding bulk samples. High charge carrier mobility and higher angular factor of the temperature dependence of mobility promote enhancement of the figure of merit Z of the films as compared with that of corresponding bulk solid solutions. TMS, 2013 Thermoelectricity nationallicence bismuth-telluride-based films nationallicence transport properties nationallicence anisotropic scattering mechanism nationallicence Lukyanova L. Ioffe Physical-Technical Institute, Russian Academy of Sciences, Polytekhnicheskaya 26, 194021, St. Petersburg, Russia aut Boikov Yu Ioffe Physical-Technical Institute, Russian Academy of Sciences, Polytekhnicheskaya 26, 194021, St. Petersburg, Russia aut Danilov V. Ioffe Physical-Technical Institute, Russian Academy of Sciences, Polytekhnicheskaya 26, 194021, St. Petersburg, Russia aut Volkov M. Ioffe Physical-Technical Institute, Russian Academy of Sciences, Polytekhnicheskaya 26, 194021, St. Petersburg, Russia aut Kutasov V. Ioffe Physical-Technical Institute, Russian Academy of Sciences, Polytekhnicheskaya 26, 194021, St. Petersburg, Russia aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/7(2013-07-01), 1796-1800 0361-5235 42:7<1796 2013 42 11664 https://doi.org/10.1007/s11664-012-2432-8 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-012-2432-8 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Lukyanova L. Ioffe Physical-Technical Institute, Russian Academy of Sciences, Polytekhnicheskaya 26, 194021, St. Petersburg, Russia aut NATIONALLICENCE 700 1- Boikov Yu Ioffe Physical-Technical Institute, Russian Academy of Sciences, Polytekhnicheskaya 26, 194021, St. Petersburg, Russia aut NATIONALLICENCE 700 1- Danilov V. Ioffe Physical-Technical Institute, Russian Academy of Sciences, Polytekhnicheskaya 26, 194021, St. Petersburg, Russia aut NATIONALLICENCE 700 1- Volkov M. Ioffe Physical-Technical Institute, Russian Academy of Sciences, Polytekhnicheskaya 26, 194021, St. Petersburg, Russia aut NATIONALLICENCE 700 1- Kutasov V. Ioffe Physical-Technical Institute, Russian Academy of Sciences, Polytekhnicheskaya 26, 194021, St. Petersburg, Russia aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/7(2013-07-01), 1796-1800 0361-5235 42:7<1796 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer