naa a22 4500 510801501 CHVBK 20180411083357.0 cr unu---uuuuu 180411e20130701xx s 000 0 eng 10.1007/s11664-012-2356-3 doi (NATIONALLICENCE)springer-10.1007/s11664-012-2356-3 Enhancement of the Thermoelectric Performance of Bi0.4Sb1.6Te3 Alloys by In and Ga Doping [Elektronische Daten] [Kyu-Hyoung Lee, Sungwoo Hwang, Byungki Ryu, Kyunghan Ahn, Jongwook Roh, Daejin Yang, Sang-Mock Lee, Hyunsik Kim, Sang-Il Kim] We report an enhancement of the thermoelectric figure of merit in polycrystalline In- and Ga-doped Bi0.4Sb1.6Te3 compounds. Via the controlled doping of In or Ga, the lattice thermal conductivity was effectively reduced by strong point-defect phonon scattering while the power factor was not significantly changed due to the similarity of the density of states near the valence-band maximum between undoped and In- or Ga-doped compositions. An enhanced ZT of 1.2 at 320K was obtained in 0.5at.% In-doped Bi0.4Sb1.6Te3 compound by these synergetic effects. TMS, 2012 Thermoelectric nationallicence Bi0.4Sb1.6Te3 nationallicence lattice thermal conductivity nationallicence point defect nationallicence power factor nationallicence Lee Kyu-Hyoung Advanced Materials Research Center, Samsung Advanced Institute of Technology, 446-712, Yong-In, South Korea aut Hwang Sungwoo Advanced Materials Research Center, Samsung Advanced Institute of Technology, 446-712, Yong-In, South Korea aut Ryu Byungki Advanced Materials Research Center, Samsung Advanced Institute of Technology, 446-712, Yong-In, South Korea aut Ahn Kyunghan Advanced Materials Research Center, Samsung Advanced Institute of Technology, 446-712, Yong-In, South Korea aut Roh Jongwook Advanced Materials Research Center, Samsung Advanced Institute of Technology, 446-712, Yong-In, South Korea aut Yang Daejin Advanced Materials Research Center, Samsung Advanced Institute of Technology, 446-712, Yong-In, South Korea aut Lee Sang-Mock Advanced Materials Research Center, Samsung Advanced Institute of Technology, 446-712, Yong-In, South Korea aut Kim Hyunsik Advanced Materials Research Center, Samsung Advanced Institute of Technology, 446-712, Yong-In, South Korea aut Kim Sang-Il Advanced Materials Research Center, Samsung Advanced Institute of Technology, 446-712, Yong-In, South Korea aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/7(2013-07-01), 1617-1621 0361-5235 42:7<1617 2013 42 11664 https://doi.org/10.1007/s11664-012-2356-3 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-012-2356-3 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Lee Kyu-Hyoung Advanced Materials Research Center, Samsung Advanced Institute of Technology, 446-712, Yong-In, South Korea aut NATIONALLICENCE 700 1- Hwang Sungwoo Advanced Materials Research Center, Samsung Advanced Institute of Technology, 446-712, Yong-In, South Korea aut NATIONALLICENCE 700 1- Ryu Byungki Advanced Materials Research Center, Samsung Advanced Institute of Technology, 446-712, Yong-In, South Korea aut NATIONALLICENCE 700 1- Ahn Kyunghan Advanced Materials Research Center, Samsung Advanced Institute of Technology, 446-712, Yong-In, South Korea aut NATIONALLICENCE 700 1- Roh Jongwook Advanced Materials Research Center, Samsung Advanced Institute of Technology, 446-712, Yong-In, South Korea aut NATIONALLICENCE 700 1- Yang Daejin Advanced Materials Research Center, Samsung Advanced Institute of Technology, 446-712, Yong-In, South Korea aut NATIONALLICENCE 700 1- Lee Sang-Mock Advanced Materials Research Center, Samsung Advanced Institute of Technology, 446-712, Yong-In, South Korea aut NATIONALLICENCE 700 1- Kim Hyunsik Advanced Materials Research Center, Samsung Advanced Institute of Technology, 446-712, Yong-In, South Korea aut NATIONALLICENCE 700 1- Kim Sang-Il Advanced Materials Research Center, Samsung Advanced Institute of Technology, 446-712, Yong-In, South Korea aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/7(2013-07-01), 1617-1621 0361-5235 42:7<1617 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer