naa a22 4500 510801528 CHVBK 20180411083357.0 cr unu---uuuuu 180411e20130701xx s 000 0 eng 10.1007/s11664-012-2403-0 doi (NATIONALLICENCE)springer-10.1007/s11664-012-2403-0 The Influence of Grain Boundary Scattering on Thermoelectric Properties of Mg2Si and Mg2Si0.8Sn0.2 [Elektronische Daten] [D. Pshenai-Severin, M. Fedorov, A. Samunin] The temperature dependences of the Seebeck coefficient, and electrical and thermal conductivities of bulk hot-pressed Sb-doped n-type Mg2Si and Mg2Si0.8Sn0.2 samples were measured in the temperature range from 300K to 850K together with the Hall coefficients at room temperature. The features of the complex band structure and scattering mechanisms were analyzed based on experimental data within the relaxation-time approximation. Based on the obtained model parameters, the possibility of improvement of the thermoelectric figure of merit due to nanostructuring and grainboundary scattering was theoretically analyzed for both Mg2Si and the solid solution. TMS, 2013 Thermoelectrics nationallicence nanocrystalline materials nationallicence electron and phonon transport nationallicence grain boundary scattering nationallicence Pshenai-Severin D. Ioffe Physical Technical Institute, Russian Academy of Sciences, Ul. Politekhnicheskaya 26, 194021, St. Petersburg, Russia aut Fedorov M. Ioffe Physical Technical Institute, Russian Academy of Sciences, Ul. Politekhnicheskaya 26, 194021, St. Petersburg, Russia aut Samunin A. Ioffe Physical Technical Institute, Russian Academy of Sciences, Ul. Politekhnicheskaya 26, 194021, St. Petersburg, Russia aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/7(2013-07-01), 1707-1710 0361-5235 42:7<1707 2013 42 11664 https://doi.org/10.1007/s11664-012-2403-0 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-012-2403-0 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Pshenai-Severin D. Ioffe Physical Technical Institute, Russian Academy of Sciences, Ul. Politekhnicheskaya 26, 194021, St. Petersburg, Russia aut NATIONALLICENCE 700 1- Fedorov M. Ioffe Physical Technical Institute, Russian Academy of Sciences, Ul. Politekhnicheskaya 26, 194021, St. Petersburg, Russia aut NATIONALLICENCE 700 1- Samunin A. Ioffe Physical Technical Institute, Russian Academy of Sciences, Ul. Politekhnicheskaya 26, 194021, St. Petersburg, Russia aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/7(2013-07-01), 1707-1710 0361-5235 42:7<1707 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer