naa a22 4500 510801676 CHVBK 20180411083358.0 cr unu---uuuuu 180411e20130701xx s 000 0 eng 10.1007/s11664-012-2450-6 doi (NATIONALLICENCE)springer-10.1007/s11664-012-2450-6 High-Performance p -Type Magnesium Silicon Thermoelectrics [Elektronische Daten] [T. Kajitani, M. Kubouchi, S. Kikuchi, K. Hayashi, T. Ueno, Y. Miyazaki, K. Yubuta] Prospective p-type magnesium-silicon compounds have been produced from mixed and sintered Mg2Si, Mg2Sr or Mg2Ba powders. The synthesis was carried out through the spark plasma sintering (SPS) process at 1123K for 10min at 50MPa. p-Type thermoelectric performance was observed for samples prepared from sintered powder at nominal compositions (Mg2Si)0.7(Mg2Sr)0.3 and (Mg2Si)0.7(Mg2Ba)0.3. The maximum dimensionless figure of merit, ZT, of the former sample reached 0.24at 700K. The crystal structures and chemical contents were carefully elucidated by powder and single-crystal x-ray diffraction (XRD) measurements, scanning electron microscopy (SEM), and transmission electron microscopy (TEM) with the use of energy-dispersive x-ray spectroscopy (EDS). The SPS samples consisted of two new unknown phases. Based on the single-crystal XRD data, the crystal structures of two different A(Sr or Ba)-Mg-Si crystals are successfully determined. The two structures are hexagonal P63/m-type A2Mg12Si7 and $$ {{P}}\bar{6}2{{m}} $$ P 6 ¯ 2 m (no. 189)-type A2Mg4Si3. The two structures consist of three-dimensionally interconnecting MgSi4 tetrahedron networks and alkaline-earth ion columns aligned parallel to the 4.3-Å axes. Both phases have identical [(A2+, Mg2+)]2[Si4−]-type chemical formulae, being identified as a kind of Zintl phase. TMS, 2013 Alkaline-earth metal nationallicence p -type magnesium silicon semiconductor nationallicence single-crystal structure refinement nationallicence Zintl phase nationallicence Kajitani T. Department of Applied Physics, Graduate School of Engineering, Tokoku University, 6-6-05 Aoba, Aoba-ku, 980-8579, Sendai, Japan aut Kubouchi M. Department of Applied Physics, Graduate School of Engineering, Tokoku University, 6-6-05 Aoba, Aoba-ku, 980-8579, Sendai, Japan aut Kikuchi S. Department of Applied Physics, Graduate School of Engineering, Tokoku University, 6-6-05 Aoba, Aoba-ku, 980-8579, Sendai, Japan aut Hayashi K. Department of Applied Physics, Graduate School of Engineering, Tokoku University, 6-6-05 Aoba, Aoba-ku, 980-8579, Sendai, Japan aut Ueno T. Department of Applied Physics, Graduate School of Engineering, Tokoku University, 6-6-05 Aoba, Aoba-ku, 980-8579, Sendai, Japan aut Miyazaki Y. Department of Applied Physics, Graduate School of Engineering, Tokoku University, 6-6-05 Aoba, Aoba-ku, 980-8579, Sendai, Japan aut Yubuta K. Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, 980-8577, Sendai, Japan aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/7(2013-07-01), 1855-1863 0361-5235 42:7<1855 2013 42 11664 https://doi.org/10.1007/s11664-012-2450-6 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-012-2450-6 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Kajitani T. Department of Applied Physics, Graduate School of Engineering, Tokoku University, 6-6-05 Aoba, Aoba-ku, 980-8579, Sendai, Japan aut NATIONALLICENCE 700 1- Kubouchi M. Department of Applied Physics, Graduate School of Engineering, Tokoku University, 6-6-05 Aoba, Aoba-ku, 980-8579, Sendai, Japan aut NATIONALLICENCE 700 1- Kikuchi S. Department of Applied Physics, Graduate School of Engineering, Tokoku University, 6-6-05 Aoba, Aoba-ku, 980-8579, Sendai, Japan aut NATIONALLICENCE 700 1- Hayashi K. Department of Applied Physics, Graduate School of Engineering, Tokoku University, 6-6-05 Aoba, Aoba-ku, 980-8579, Sendai, Japan aut NATIONALLICENCE 700 1- Ueno T. Department of Applied Physics, Graduate School of Engineering, Tokoku University, 6-6-05 Aoba, Aoba-ku, 980-8579, Sendai, Japan aut NATIONALLICENCE 700 1- Miyazaki Y. Department of Applied Physics, Graduate School of Engineering, Tokoku University, 6-6-05 Aoba, Aoba-ku, 980-8579, Sendai, Japan aut NATIONALLICENCE 700 1- Yubuta K. Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, 980-8577, Sendai, Japan aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/7(2013-07-01), 1855-1863 0361-5235 42:7<1855 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer