naa a22 4500 510801773 CHVBK 20180411083358.0 cr unu---uuuuu 180411e20130701xx s 000 0 eng 10.1007/s11664-012-2249-5 doi (NATIONALLICENCE)springer-10.1007/s11664-012-2249-5 Effects of Microstructural Evolution on the Thermoelectric Properties of Spark-Plasma-Sintered Ti0.3Zr0.35Hf0.35NiSn Half-Heusler Compound [Elektronische Daten] [O. Appel, M. Schwall, D. Mogilyansky, M. Köhne, B. Balke, Y. Gelbstein] The MNiSn (M=Ti, Zr, Hf) half-Heusler semiconducting compounds are widely investigated due to their good potential for thermoelectric (TE) power generation applications. In the current work, the evolution of the transport and structural properties of the Ti0.3Zr0.35Hf0.35NiSn compound upon various thermal treatments was studied. The nominal composition was arc melted, ball milled, and spark plasma sintered (SPS). Following SPS, large Hf-rich domains were found by scanning electron microscopy (SEM) and energy-dispersive x-ray spectroscopy (EDS). Subsequently, the samples were subjected to homogenization treatments at 1163K for 480h and 610h under argon atmosphere. Following these thermal treatments, the relative amount of the Hf-rich domains was reduced and they became smaller in size, with increasing thermal treatment duration. Nevertheless, no uniphased structure was reached. The dissolution of the Hf-rich domains in the half-Heusler matrix resulted in increase of both the Seebeck coefficient and electrical resistivity values and a decrease of the carrier concentration, attributed to elimination of these metallic domains. Resulting from the high atomic disorder caused by substitution at the M site, low thermal conductivity values of ~3.8Wm−1K−1 were obtained leading to high ZT values of up to 0.82 following SPS. TMS, 2012 Half-Heusler nationallicence thermoelectrics nationallicence microstructure nationallicence efficiency nationallicence figure of merit nationallicence Appel O. Department of Materials Engineering, Ben-Gurion University of the Negev, Beer-Sheva, Israel aut Schwall M. Institute of Inorganic and Analytical Chemistry, Johannes Gutenberg-University, Mainz, Germany aut Mogilyansky D. Department of Materials Engineering, Ben-Gurion University of the Negev, Beer-Sheva, Israel aut Köhne M. Robert Bosch GmbH, 70049, Stuttgart, Germany aut Balke B. Institute of Inorganic and Analytical Chemistry, Johannes Gutenberg-University, Mainz, Germany aut Gelbstein Y. Department of Materials Engineering, Ben-Gurion University of the Negev, Beer-Sheva, Israel aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/7(2013-07-01), 1340-1345 0361-5235 42:7<1340 2013 42 11664 https://doi.org/10.1007/s11664-012-2249-5 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-012-2249-5 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Appel O. Department of Materials Engineering, Ben-Gurion University of the Negev, Beer-Sheva, Israel aut NATIONALLICENCE 700 1- Schwall M. Institute of Inorganic and Analytical Chemistry, Johannes Gutenberg-University, Mainz, Germany aut NATIONALLICENCE 700 1- Mogilyansky D. Department of Materials Engineering, Ben-Gurion University of the Negev, Beer-Sheva, Israel aut NATIONALLICENCE 700 1- Köhne M. Robert Bosch GmbH, 70049, Stuttgart, Germany aut NATIONALLICENCE 700 1- Balke B. Institute of Inorganic and Analytical Chemistry, Johannes Gutenberg-University, Mainz, Germany aut NATIONALLICENCE 700 1- Gelbstein Y. Department of Materials Engineering, Ben-Gurion University of the Negev, Beer-Sheva, Israel aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/7(2013-07-01), 1340-1345 0361-5235 42:7<1340 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer