naa a22 4500 510801838 CHVBK 20180411083358.0 cr unu---uuuuu 180411e20130701xx s 000 0 eng 10.1007/s11664-012-2417-7 doi (NATIONALLICENCE)springer-10.1007/s11664-012-2417-7 On the Thermoelectric Properties of Zintl Compounds Mg3Bi2− x Pn x (Pn=P and Sb) [Elektronische Daten] [V. Ponnambalam, Donald Morelli] A series of Zintl compounds Mg3Bi2-x Pn x (Pn=P and Sb) have been synthesized by the solid-state reaction method. While Sb can be substituted to a level as high as x=1.0, P can be substituted only up to x=0.5. The thermoelectric potential of these compounds has been evaluated by measuring resistivity (ρ), Seebeck (α) and Hall coefficients, and thermal conductivity between 80K and 850K. The measured resistivity and Seebeck coefficient values are consistent with those expected for small-bandgap semiconductors. Hall measurements suggest that the carriers are p type with concentration (p) increasing from ~1019cm−3 to ~1020cm−3 as the Bi content is increased. The Hall mobility decreases with increasing temperature (T) and reaches a more or less similar value (~45cm2/Vs) for all substituted compositions at room temperature. Due to mass defect scattering, the lattice thermal conductivity (κ L) is decreased to a minimum of ~1.2W/mK in Mg3BiSb. The power factor (α 2/ρ) is found to be rather low and falls in the range 0.38mW/mK2 to 0.66mW/mK2. As expected, at a high temperature of 825K, the total thermal conductivity (κ) of Mg3BiSb reaches an impressive value of ~1.0W/mK. The highest dimensionless figure of merit (ZT) is realized for Mg3BiSb and is ~0.4 at 825K. TMS, 2013 Thermoelectrics nationallicence Zintl phases nationallicence magnesium bismuthides nationallicence Seebeck and Hall coefficients nationallicence Ponnambalam V. Department of Chemical Engineering and Materials Science, Michigan State University, 48824-1226, East Lansing, MI, USA aut Morelli Donald Department of Chemical Engineering and Materials Science, Michigan State University, 48824-1226, East Lansing, MI, USA aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/7(2013-07-01), 1307-1312 0361-5235 42:7<1307 2013 42 11664 https://doi.org/10.1007/s11664-012-2417-7 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-012-2417-7 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Ponnambalam V. Department of Chemical Engineering and Materials Science, Michigan State University, 48824-1226, East Lansing, MI, USA aut NATIONALLICENCE 700 1- Morelli Donald Department of Chemical Engineering and Materials Science, Michigan State University, 48824-1226, East Lansing, MI, USA aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/7(2013-07-01), 1307-1312 0361-5235 42:7<1307 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer