naa a22 4500 510801846 CHVBK 20180411083358.0 cr unu---uuuuu 180411e20130701xx s 000 0 eng 10.1007/s11664-013-2539-6 doi (NATIONALLICENCE)springer-10.1007/s11664-013-2539-6 Scalable Silicon Nanostructuring for Thermoelectric Applications [Elektronische Daten] [E. Koukharenko, S. Boden, D. Platzek, D. Bagnall, N. White] The current limitations of commercially available thermoelectric (TE) generators include their incompatibility with human body applications due to the toxicity of commonly used alloys and possible future shortage of raw materials (Bi-Sb-Te and Se). In this respect, exploiting silicon as an environmentally friendly candidate for thermoelectric applications is a promising alternative since it is an abundant, ecofriendly semiconductor for which there already exists an infrastructure for low-cost and high-yield processing. Contrary to the existing approaches, where n/p-legs were either heavily doped to an optimal carrier concentration of 1019cm−3 or morphologically modified by increasing their roughness, in this work improved thermoelectric performance was achieved in smooth silicon nanostructures with low doping concentration (1.5×1015 cm−3). Scalable, highly reproducible e-beam lithographies, which are compatible with nanoimprint and followed by deep reactive-ion etching (DRIE), were employed to produce arrays of regularly spaced nanopillars of 400nm height with diameters varying from 140nm to 300nm. A potential Seebeck microprobe (PSM) was used to measure the Seebeck coefficients of such nanostructures. This resulted in values ranging from −75μV/K to −120μV/K for n-type and 100μV/K to 140μV/K for p-type, which are significant improvements over previously reported data. TMS, 2013 Silicon nationallicence nanostructures nationallicence low doping concentrations nationallicence e-beam lithography nationallicence Koukharenko E. Electronics and Computer Science, University of Southampton, Southampton, UK aut Boden S. Electronics and Computer Science, University of Southampton, Southampton, UK aut Platzek D. PANCO—Physics Technology, Development and Consulting GmbH, Mülheim-Kärlich, Germany aut Bagnall D. Electronics and Computer Science, University of Southampton, Southampton, UK aut White N. Electronics and Computer Science, University of Southampton, Southampton, UK aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/7(2013-07-01), 2114-2118 0361-5235 42:7<2114 2013 42 11664 https://doi.org/10.1007/s11664-013-2539-6 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-013-2539-6 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Koukharenko E. Electronics and Computer Science, University of Southampton, Southampton, UK aut NATIONALLICENCE 700 1- Boden S. Electronics and Computer Science, University of Southampton, Southampton, UK aut NATIONALLICENCE 700 1- Platzek D. PANCO—Physics Technology, Development and Consulting GmbH, Mülheim-Kärlich, Germany aut NATIONALLICENCE 700 1- Bagnall D. Electronics and Computer Science, University of Southampton, Southampton, UK aut NATIONALLICENCE 700 1- White N. Electronics and Computer Science, University of Southampton, Southampton, UK aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/7(2013-07-01), 2114-2118 0361-5235 42:7<2114 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer