naa a22 4500 510801870 CHVBK 20180411083359.0 cr unu---uuuuu 180411e20130701xx s 000 0 eng 10.1007/s11664-012-2211-6 doi (NATIONALLICENCE)springer-10.1007/s11664-012-2211-6 Effects of Ni, Pd, and Pt Substitutions on Thermoelectric Properties of CoSi Alloys [Elektronische Daten] [Hui Sun, Xu Lu, Donald Morelli] Ni-, Pd-, and Pt-substituted CoSi samples have been prepared by an arc melting and annealing procedure. The x-ray diffraction and scanning electron microscopy results show that Ni and Pd are effective n-type dopants for CoSi, while Pt is immiscible with CoSi and forms an impurity phase with a possible chemical formula of PtCoSi2. The thermoelectric properties were measured from 80K to 300K. For Ni- and Pd-doped samples, the electrical resistivity and Seebeck coefficient decrease simultaneously due to the increasing carrier concentration. For Pt-substituted samples, the electrical resistivity also decreases. However, this reduction is thought to be not due to an increase in carriers but rather to originate from the effect of the Pt-rich impurity phase at the grain boundaries. The Seebeck coefficient is not affected by 1% Pt substitution; however, further increase of the Pt level also causes a decrease in the Seebeck coefficient. The room-temperature power factor is 63μWK−2cm−1 for pure CoSi and 73μWK−2cm−1 for the Co0.99Pt0.01Si sample. Although the thermal conductivity is reduced for both n-type-doped and Pt-substituted samples around 80K, the room-temperature values are still close to that of pure CoSi. As a result, ZT of 0.13 is obtained at room temperature for Co0.99Pt0.01Si, an 18% increase compared with CoSi. TMS, 2012 CoSi nationallicence Ni doping nationallicence Pd doping nationallicence Pt substitution nationallicence impurity phase nationallicence thermoelectric properties nationallicence Sun Hui Department of Chemical Engineering and Materials Science, Michigan State University, 48824, East Lansing, MI, USA aut Lu Xu Department of Physics and Astronomy, Michigan State University, 48824, East Lansing, MI, USA aut Morelli Donald Department of Chemical Engineering and Materials Science, Michigan State University, 48824, East Lansing, MI, USA aut Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/7(2013-07-01), 1352-1357 0361-5235 42:7<1352 2013 42 11664 https://doi.org/10.1007/s11664-012-2211-6 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/s11664-012-2211-6 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Sun Hui Department of Chemical Engineering and Materials Science, Michigan State University, 48824, East Lansing, MI, USA aut NATIONALLICENCE 700 1- Lu Xu Department of Physics and Astronomy, Michigan State University, 48824, East Lansing, MI, USA aut NATIONALLICENCE 700 1- Morelli Donald Department of Chemical Engineering and Materials Science, Michigan State University, 48824, East Lansing, MI, USA aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer US; http://www.springer-ny.com 42/7(2013-07-01), 1352-1357 0361-5235 42:7<1352 2013 42 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer